# US 8,541,318 B2 · Monosilane or disilane derivatives and method for low temperature deposition of silicon-containing films using the same

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- Number: US 8,541,318 B2
- Document ID: US8541318B2
- Status: Granted
- Kind: B2
- Application number: 13/369,810
- Filed: 2012-02-09
- Published: 2012-06-21
- Granted: 2013-09-24
- Earliest claimed: 2003-10-10
- Assignees: Advanced Technology Materials, Inc.
- Applicants: Ziyun Wang; Chongying Xu; Thomas H. Baum
- Inventors: Ziyun Wang; Chongying Xu; Thomas H. Baum
- Web page: https://patentgrep.com/patent/US8541318B2

## CPC

- C07F 7/10: containing nitrogen {having a Si-N linkage}
- C07F: ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM (metal-containing porphyrins C07D487/22)

## Abstract

This invention relates to silicon precursor compositions for forming silicon-containing films by low temperature (e.g., <550° C.) chemical vapor deposition processes for fabrication of ULSI devices and device structures. Such silicon precursor compositions comprise at least a silane or disilane derivative that is substituted with at least one alkylhydrazine functional groups and is free of halogen substitutes.

## Claims

### Claim 1

A method of forming a silicon-containing film on a substrate, comprising contacting a substrate under vapor deposition conditions with a vapor of a compound selected from the group consisting of:
(i) compounds of the formula:
wherein R1 and R2 may be the same as or different from each another and are independently selected from the group consisting of H, C1-C7 alkyl, aryl, and C3-C6 cycloalkyl, or R1 and R2 together may form C3-C6 heterocyclic functional group with N, and wherein X, Y, and Z may be the same as or different from one another and are independently selected from the group consisting of C1-C7 alkyl, alkylamino, and dialkylamino; and
(ii) compounds of the formula:
wherein R1, R2, R3, and R4 may be the same as or different from one another and are independently selected from the group consisting of H, C1-C7 alkyl, aryl, and C3-C6 cycloalkyl, or R1 and R2 together may form a C3-C6 heterocyclic functional group with N, or R3 and R4 together may form a C3-C6 heterocyclic functional group with N, and wherein X1, X2, Y1, and Y2 may be the same as or different from one another and are independently selected from the group consisting of H, C1-C7 alkyl, alkylamino, dialkylamino, and R1R2NNH—, wherein R1 and R2 are as described above, and wherein R1, R2, R3, R4, X1, X2, Y1, and Y2 are not all methyl.

### Claim 2 (depends on 1)

The method of claim 1, wherein the vapor deposition conditions comprise temperature below 450° C.

### Claim 3 (depends on 1)

The method of claim 1, wherein the compound is selected from the group consisting of compounds of formula (I).

### Claim 4 (depends on 1)

The method of claim 1, wherein said film comprises silicon dioxide, silicon nitride or siliconoxynitride.

### Claim 5 (depends on 1)

The method of claim 1, wherein said film comprises a low dielectric constant silicon-containing film.

### Claim 6 (depends on 1)

The method of claim 1, wherein said film comprises a gate silicate film.

### Claim 7 (depends on 1)

The method of claim 1, wherein the substrate comprises a semiconductor device substrate.

### Claim 8 (depends on 1)

The method of claim 1, wherein said vapor deposition comprises chemical vapor deposition and said vapor is transported to said contacting at temperature below 300° C.

### Claim 9 (depends on 1)

The method of claim 1, conducted in an ULSI device fabrication process.

### Claim 10 (depends on 1)

The method of claim 1, wherein X, Y and Z are all C1-C7 alkyl.

### Claim 11 (depends on 1)

The method of claim 1, wherein the compound is Me3Si(HNNMe2).

### Claim 12 (depends on 11)

The method of claim 11, further comprising forming said vapor by volatilizing Me3Si(HNNMe2) from a liquid phase.

### Claim 13

A method of forming a silicon-containing film on a substrate, comprising contacting a substrate under vapor deposition conditions comprising a temperature below 450° C. with a vapor of a compound selected from the group consisting of:
(i) compounds of the formula:
wherein R1 and R2 may be the same as or different from each another and are independently selected from the group consisting of H, C1-C7 alkyl, aryl, and C3-C6 cycloalkyl, or R1 and R2 together may form C3-C6 heterocyclic functional group with N, and wherein X, Y, and Z are all the same as one another and are independently selected from the group consisting of H, C1-C7 alkyl, alkylamino, dialkylamino, and R1R2NNH—, wherein R1 and R2 are same as above and wherein R1R2, X, Y and Z are not all H; and
(ii) compounds of the formula:
wherein R1, R2, R3, and R4 may be the same as or different from one another and are independently selected from the group consisting of H, C1-C7 alkyl, aryl, and C3-C6 cycloalkyl, or R1 and R2 together may form a C3-C6 heterocyclic functional group with N, or R3 and R4 together may form a C3-C6 heterocyclic functional group with N, and wherein X1, X2, Y1, and Y2 may be the same as or different from one another and are independently selected from the group consisting of H, C1-C7 alkyl, alkylamino, dialkylamino, and R1R2NNH—, wherein R1 and R2 are as described above, and wherein R1, R2, R3, R4, X1, X2, Y1, and Y2 are not all methyl.

### Claim 14 (depends on 13)

The method of claim 13, wherein X, Y and Z are all C1-C7 alkyl.

### Claim 15 (depends on 13)

The method of claim 13, wherein said film comprises silicon dioxide, silicon nitride or siliconoxynitride.

### Claim 16 (depends on 13)

The method of claim 13, wherein said film comprises a low dielectric constant silicon-containing film.

### Claim 17 (depends on 13)

The method of claim 13, wherein said film comprises a gate silicate film.

### Claim 18 (depends on 13)

The method of claim 13, wherein the substrate comprises a semiconductor device substrate.

### Claim 19 (depends on 13)

The method of claim 13, wherein X, Y and Z are all alkylhydrazido.

### Claim 20 (depends on 19)

The method of claim 19, wherein the alkylhydrazido is methylhydrazido or ethylhydrazido.