# US 8,541,317 B2 · Deposition method for passivation of silicon wafers > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 8,541,317 B2 - Document ID: US8541317B2 - Status: Granted - Kind: B2 - Application number: 12/979,761 - Filed: 2010-12-28 - Published: 2011-08-04 - Granted: 2013-09-24 - Earliest claimed: 2008-07-04 - Assignees: ABB Technology AG - Applicants: Kranthi Akurati; Magnus Kunow; Andreas Zimmermann; Ron Jervis - Inventors: Kranthi Akurati; Magnus Kunow; Andreas Zimmermann; Ron Jervis - Web page: https://patentgrep.com/patent/US8541317B2 ## CPC - H10P 72/7611: {characterised by edge profile or support profile} - C23C 16/042: {using masks} - C23C 16/26: Deposition of carbon only - C23C 16/4583: {the substrate being supported substantially horizontally} - C23C 16/503: using DC or AC discharges - H01J 37/32733: {Means for moving the material to be treated} - H10P 72/7624: {characterised by the mechanical construction of the susceptor, stage or support} - H10P 14/6336: {in the presence of a plasma [PECVD]} - H10P 14/6902: {composed of carbon, e.g. alpha-C, diamond or hydrogen doped carbon} - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) - H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H) ## Abstract A substrate is mounted onto an elevated substrate support of a substrate carrier plate. The substrate carrier plate with the substrate is then placed in a plasma reactor. Due to the elevated substrate support, both opposite sides of the substrate are exposed to the plasma and are therefore coated with an electrical passivation layer. ## Claims ### Claim 1 A substrate carrier plate for carrying a silicon wafer for the manufacturing of a semiconductor device during a deposition process for depositing a double-sided deposition of an amorphous hydrogenated carbon layer on first and second bevels of the wafer in a plasma reactor chamber, wherein the wafer includes a first main side having the first bevel on a border of the first main side, and a second main side having a central area and the second bevel on a border of the second main side surrounding the central area, the second main side being arranged opposite the first main side, and wherein the substrate carrier plate comprises: a substrate support for carrying the wafer, wherein the substrate support is formed such that when the wafer is placed on the substrate support, only the central area of the second main side comes in contact with the substrate support so that the amorphous hydrogenated carbon layer is deposited on both the first and second bevels of the wafer on the opposite first and second main sides of the wafer, respectively, when the central area of the second main side is in contact with the substrate support. ### Claim 2 (depends on 1) The substrate carrier plate as in claim 1, comprising a substrate support, wherein the substrate support has a surface area in a surface plane, on which the central area of the wafer is to be placed, and wherein the substrate carrier plate has a cross-section which diminishes with distance from the surface plane at least up to a first depth. ### Claim 3 (depends on 2) The substrate carrier plate as in claim 2, comprising several substrate supports each for carrying a wafer. ### Claim 4 (depends on 1) The substrate carrier plate as in claim 1, comprising several substrate supports each for carrying a respective wafer. ### Claim 5 (depends on 1) The substrate carrier plate as in claim 1, wherein said substrate support is a separate part which is attached to said substrate carrier plate. ### Claim 6 (depends on 5) The substrate carrier plate as in claim 5, wherein said substrate carrier plate comprises a substrate support configured to support a first wafer thereon, and to support at least one further wafer stacked on the first wafer. ### Claim 7 (depends on 1) The substrate carrier plate as in claim 1, wherein said substrate carrier plate comprises a substrate support configured to support a first wafer thereon, and to support at least one further wafer stacked on the first wafer. ### Claim 8 (depends on 7) The substrate carrier plate as in claim 7, comprising an additional substrate support arranged between each pair of adjacent wafers in the stack, the wafers from each pair of adjacent wafers being separated from each other by the additional substrate support, respectively. ### Claim 9 (depends on 8) The substrate carrier plate as in claim 8, comprising cooling means arranged in said additional substrate support. ### Claim 10 (depends on 8) The substrate carrier plate as in claim 8, comprising an electrically conducting connection arranged between said additional substrate support and at least one of (i) the substrate support, (ii) the substrate carrier plate, (iii) and an electrode of the substrate carrier plate. ### Claim 11 (depends on 7) A deposition apparatus for depositing a double-sided deposition of an amorphous hydrogenated carbon layer deposition on first and second bevels respectively arranged on opposing first and second surfaces of a silicon wafer, comprising: a reaction chamber of a plasma reactor; two parallel plate electrodes inside the reaction chamber of the plasma reactor; a substrate carrier plate according to claim 7 having at least one wafer placed on the substrate support, wherein the substrate carrier plate is arranged on one of the electrodes. ### Claim 12 (depends on 5) A deposition apparatus for depositing a double-sided deposition of an amorphous hydrogenated carbon layer deposition on first and second bevels respectively arranged on opposing first and second surfaces of a silicon wafer, comprising: a reaction chamber of a plasma reactor; two parallel plate electrodes inside the reaction chamber of the plasma reactor; a substrate carrier plate according to claim 5 having at least one wafer placed on the substrate support, wherein the substrate carrier plate is arranged on one of the electrodes. ### Claim 13 (depends on 12) The deposition apparatus as in claim 12, comprising cooling means for cooling the wafer during the deposition process. ### Claim 14 (depends on 13) The deposition apparatus as in claim 13, wherein said cooling means are arranged in at least one of (i) the substrate carrier plate, (ii) the substrate support of the substrate carrier plate, a (iii) a surface of a shadow mask covering the wafer, the surface of the shadow mask facing the other one of the two plate electrodes. ### Claim 15 (depends on 13) The deposition apparatus as in claim 13, wherein said cooling means are arranged in or adjacent to the one of the electrodes on which the substrate carrier plate is arranged. ### Claim 16 (depends on 15) The deposition apparatus as in claim 15, wherein said cooling means are arranged in at least one of (i) the substrate carrier plate, (ii) the substrate support of the substrate carrier plate, a (iii) a surface of a shadow mask covering the wafer, the surface of the shadow mask facing the other one of the two plate electrodes. ### Claim 17 (depends on 1) The substrate carrier plate as in claim 1, wherein the substrate support is cylindrical. ### Claim 18 (depends on 1) The substrate carrier plate as in claim 1, wherein said substrate carrier plate comprises cooling means arranged in said substrate support. ### Claim 19 (depends on 1) The substrate carrier plate as in claim 1, wherein said substrate support is elevated from said substrate carrier plate.