# US 8,541,313 B2 · Method for etching a sacrificial layer for a micro-machined structure

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- Number: US 8,541,313 B2
- Document ID: US8541313B2
- Status: Granted
- Kind: B2
- Application number: 12/090,212
- Filed: 2006-10-25
- Published: 2009-05-14
- Granted: 2013-09-24
- Earliest claimed: 2005-10-27
- Assignees: Commissariat a l'Energie Atomique
- Applicants: Stéphan Borel; Jeremy Bilde
- Inventors: Stéphan Borel; Jeremy Bilde
- Web page: https://patentgrep.com/patent/US8541313B2

## CPC

- B81C 1/00595: {Control etch selectivity}
- B81C 1/00476: {removing a sacrificial layer (B81C1/00912 takes precedence)}
- H10P 50/242: {of Group IV materials}
- B81C: PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS (making microcapsules or microballoons B01J13/02; processes or apparatus specially adapted for the manufacture or treatment of piezoelectric, electrostrictive or magnetostrictive elements per se H10N30/01)
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

A method of etching a sacrificial layer for a micro-machined structure, the sacrificial layer positioned between a layer of a first material and a layer of a second material, the etching being carried out by an etching agent. The method includes: providing at least one species having an affinity for the etching agent greater than that of the layers of first material and second material and less than or equal to that of the sacrificial layer; and then etching the sacrificial layer by the etching agent, the etching being carried out to eliminate at least partially the sacrificial layer and then to eliminate at least partially the species.

## Claims

### Claim 1

A method of etching a sacrificial layer for a micro-machined structure, the structure comprising a first silicon layer, the sacrificial layer in SiGe epitaxied on the first silicon layer and a second silicon layer epitaxied on the sacrificial layer, the method comprising:
providing at least one species in SiGe which is less rich in Ge than the sacrificial layer, the species in SiGe being in the form of a material present on the structure and separated from the second silicon layer; and
then, etching the sacrificial layer by an etching agent that is a gas containing fluorine, the etching being carried out to eliminate the sacrificial layer and then to at least partially eliminate said species.

### Claim 2 (depends on 1)

An etching method according to claim 1, wherein the species is present on the structure in a form of a solid material.

### Claim 3 (depends on 2)

An etching method according to claim 2, wherein the species is constituted of a material arranged near to the sacrificial layer.

### Claim 4 (depends on 2)

An etching method according to claim 2, wherein the species is constituted of a layer of a material between the sacrificial layer and the first silicon layer.