# US 8,541,304 B2 · Production of TSV interconnection structures made up of an insulating contour and a conductive zone situated in the contour and disconnected from the contour > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 8,541,304 B2 - Document ID: US8541304B2 - Status: Granted - Kind: B2 - Application number: 12/968,125 - Filed: 2010-12-14 - Published: 2011-06-16 - Granted: 2013-09-24 - Earliest claimed: 2009-12-15 - Assignees: Commissariat A L'energie Atomique Et Aux Energies Alternatives - Applicants: Gabriel Pares - Inventors: Gabriel Pares - Web page: https://patentgrep.com/patent/US8541304B2 ## CPC - H10W 20/023: {the interconnections being through-semiconductor vias} - H10W 20/0234: {comprising etching via holes that stop on pads or on electrodes} - H10W 20/0242: {comprising etching via holes from the back sides of the chips, wafers or substrates} - H10W 20/0245: {comprising use of blind vias during the manufacture} - H10W 20/20: Interconnections within wafers or substrates, e.g. through-silicon vias [TSV] - H10W 20/2125: {Top-view shapes} - H10W 20/217: {comprising ring-shaped isolation structures outside of the via holes} - H10W 72/244: {relative to underlying supporting features, e.g. bond pads, RDLs or vias} - H10W 72/248: {Top-view layouts, e.g. mirror arrays} - H10W 72/29: Bond pads specially adapted therefor - H10W 72/942: {relative to underlying supporting features, e.g. bond pads, RDLs or vias} - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract A method for producing an interconnection structure is disclosed. In one aspect, there is formation in a substrate of at least one trench forming a closed contour and at least one hole situated inside the closed contour, the trench and the hole being separated by a zone of the substrate. Furthermore, the trench is filled with a dielectric material and the hole is filled with a conducting material. ## Claims ### Claim 1 A method for producing an interconnection structure with at least one via passing through a substrate, the method comprising: simultaneously forming, in a front face of the substrate, at least one first opening producing a closed contour and at least one second opening situated inside the closed contour, wherein the second opening does not pass through the substrate and the second opening includes a wall and a bottom, the first opening and the second opening being separated by a zone of the substrate; filling the first and second openings with a first material; removing the first material from one of the first and second openings from the front face; forming or depositing a second material in the one of the first and second openings from which the first material is removed; and after forming or depositing the second material, revealing the second opening from a back face of the substrate to form one interconnection via, wherein each of the first material and the second material comprises one of a dielectric material and a conducting material, and wherein the first material is different from the second material. ### Claim 2 (depends on 1) The method according to claim 1, wherein the first material comprises a dielectric material and the second material comprise a conducting material, wherein the first material is removed from the second opening, and wherein the second material is formed or deposited in the second opening. ### Claim 3 (depends on 2) The method according to claim 2, wherein the conducting material is formed in the second opening so as to cover the bottom and the wall of the second opening, the method further comprising filling in the rest of the second opening with an insulating material. ### Claim 4 (depends on 2) The method according to claim 2, further comprising, between the removing of the dielectric material from the second opening and the forming or depositing the conducting material in the second opening, enlarging the second opening. ### Claim 5 (depends on 2) The method according to claim 2, wherein the substrate has a base of a given conducting or semi-conducting material and the conducting material is a metal. ### Claim 6 (depends on 2) The method according to claim 2, wherein the second opening filled with the conducting material forms a conductor member, the method further comprising producing at least one connecting stud on the conductor member. ### Claim 7 (depends on 2) The method according to claim 2, wherein the second opening is filled with the conducting material forming a conductor member, the method further comprising thinning at least one of the faces of the substrate so as to reveal one end of the conductor member. ### Claim 8 (depends on 7) The method according to claim 7, further comprising producing a conducting stud on the end of the conductor member. ### Claim 9 (depends on 2) The method according to claim 2, wherein the substrate comprises one or several conducting zones situated on one of the front and back face of the substrate, the simultaneously forming includes etching from the other of the front and back face of the substrate so as to reveal at least one of the conducting zones. ### Claim 10 (depends on 2) The method according to claim 2, the simultaneous forming comprising producing one or several other openings situated inside the closed contour. ### Claim 11 (depends on 2) The method according to claim 2, the simultaneous forming comprising producing at least one other opening forming another closed contour surrounding the closed contour. ### Claim 12 (depends on 1) The method according to claim 1, wherein the first material comprises a conducting material and the second material comprise a dielectric material, wherein the first material is removed from the first opening, and wherein the second material is formed or deposited in the first opening. ### Claim 13 (depends on 12) The method according to claim 12, wherein after depositing of the conducting material in the first opening and the second opening, and removing the conducting material from the first opening, heat treating the interconnection structure so as to form an alloy of a material of the substrate and the conducting material. ### Claim 14 (depends on 12) The method according to claim 12, wherein the conducting material is formed in the second opening so as to cover the bottom and the wall of the second opening, the method further comprising filling in the rest of the second opening with an insulating material. ### Claim 15 (depends on 12) The method according to claim 12, wherein filling in the rest of the second opening with an insulating material is performed at the same time as depositing the dielectric material in the first opening, the dielectric material filling in the rest of the second opening. ### Claim 16 (depends on 12) The method according to claim 12, wherein the substrate has a base of a given conducting or semi-conducting material and the conducting material is a metal. ### Claim 17 (depends on 12) The method according to claim 12, wherein the second opening filled with the conducting material forms a conductor member, the method further comprising producing at least one connecting stud on the conductor member. ### Claim 18 (depends on 12) The method according to claim 12, wherein the second opening is filled with the conducting material forming a conductor member, the method further comprising thinning at least one of the faces of the substrate so as to reveal one end of the conductor member. ### Claim 19 (depends on 18) The method according to claim 18, further comprising producing a conducting stud on the end of the conductor member. ### Claim 20 (depends on 12) The method according to claim 12, wherein the substrate comprises one or several conducting zones situated on one of the substrate faces, and the forming of the second opening includes etching from the other of its faces so as to reveal at least one of the conducting zones. ### Claim 21 (depends on 12) The method according to claim 12, wherein the simultaneously forming comprises producing one or several other openings situated inside the closed contour. ### Claim 22 (depends on 12) The method according to claim 12, wherein the simultaneously forming comprises producing at least one other opening forming another closed contour surrounding the closed contour.