# US 8,541,303 B2 · Method for fabricating MOS transistor

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- Number: US 8,541,303 B2
- Document ID: US8541303B2
- Status: Granted
- Kind: B2
- Application number: 13/246,880
- Filed: 2011-09-28
- Published: 2013-03-28
- Granted: 2013-09-24
- Earliest claimed: 2011-09-28
- Assignees: United Microelectronics Corp.
- Applicants: Kuo-Chih Lai; Nien-Ting Ho; Shu Min Huang; Bor-Shyang Liao; Chia Chang Hsu
- Inventors: Kuo-Chih Lai; Nien-Ting Ho; Shu Min Huang; Bor-Shyang Liao; Chia Chang Hsu
- Web page: https://patentgrep.com/patent/US8541303B2

## CPC

- H10P 95/90: Thermal treatments, e.g. annealing or sintering
- H10D 30/0212: {using self-aligned silicidation}
- H10D 64/0112: {using conductive layers comprising silicides}
- H10D 64/0131: {the additional conductive layer comprising a silicide layer formed by the silicidation reaction between the layer of silicon with a metal layer which is not formed by metal implantation}
- H10P 70/27: {during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

A method for fabricating metal-oxide semiconductor (MOS) transistor is disclosed. The method includes the steps of: providing a semiconductor substrate having a silicide thereon; performing a first rapid thermal process to drive-in platinum from a surface of the silicide into the silicide; and removing un-reacted platinum in the first rapid thermal process.

## Claims

### Claim 1

A method for fabricating metal-oxide semiconductor (MOS) transistor, comprising:
providing a semiconductor substrate, wherein the semiconductor substrate comprises a source/drain region thereon;
forming a Ni—Pt layer and a barrier layer on the source/drain region;
performing a first rapid thermal process to form part of the Ni—Pt layer and the source/drain region into a silicide;
removing un-reacted nickel and barrier layer from the first thermal process;
performing a second rapid thermal process to drive-in platinum from a surface of the silicide into the silicide;
removing un-reacted platinum from the second rapid thermal process; and
performing a third rapid thermal process for lowering the resistance of the silicide.

### Claim 2 (depends on 1)

The method of claim 1, wherein the temperature of the first rapid thermal process and the second thermal process is between 240° C. to 290° C.

### Claim 3 (depends on 1)

The method of claim 1, wherein the duration of the first rapid thermal process and the second rapid thermal process is between 30 seconds to 120 seconds.

### Claim 4 (depends on 1)

The method of claim 1, wherein the temperature of the third rapid thermal process is higher than 300° C.

### Claim 5 (depends on 1)

The method of claim 1, wherein the barrier layer comprises TiN.

### Claim 6 (depends on 1)

The method of claim 1, further comprising:
using a sulfuric acid-hydrogen peroxide mixture (SPM) for removing un-reacted nickel and the barrier layer from the first rapid thermal process; and
using a hydrochloric acid-hydrogen peroxide mixture (HPM) for removing un-reacted platinum from the second rapid thermal process.