# US 8,541,289 B2 · Dicing die bonding film and dicing method > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 8,541,289 B2 - Document ID: US8541289B2 - Status: Granted - Kind: B2 - Application number: 12/681,572 - Filed: 2008-10-15 - Published: 2010-11-18 - Granted: 2013-09-24 - Earliest claimed: 2007-12-03 - Assignees: LG Chem, Ltd. - Applicants: Jong Wan Hong; Jang Soon Kim; Hyo Soon Park; Hyun Jee Yoo; Dong Han Kho; Hyo Sook Joo - Inventors: Jong Wan Hong; Jang Soon Kim; Hyo Soon Park; Hyun Jee Yoo; Dong Han Kho; Hyo Sook Joo - Web page: https://patentgrep.com/patent/US8541289B2 ## CPC - C09J 163/00: Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins - H10P 72/7402: {Wafer tapes, e.g. grinding or dicing support tapes} - H10P 72/7404: {the wafer tape being a laminate of three or more layers, e.g. including additional layers beyond a base layer and an uppermost adhesive layer} - H10P 72/742: {involving stretching of the auxiliary support post dicing} - H10P 72/7438: {with parts of the auxiliary support remaining in the finished device} - H10W 72/354: {comprising polymers} - H10W 72/884: {Die-attach connectors and bond wires} - H10W 90/734: {between a chip and a stacked insulating package substrate, interposer or RDL} - Y10T 428/24: Structurally defined web or sheet [e.g., overall dimension, etc.] - C09J: ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES (preparation of glue or gelatine C09H) - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 - Y10T: TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION ## Abstract The present invention relates to a dicing die bonding film, which is able to maintain good workability and reliability in any semiconductor packaging process, such as adhesive property, gap filling property and pick-up property, while controlling burr incidence in a dicing process and thus contamination of die, and a dicing method. Specifically, the present invention is characterized by optimizing tensile characteristics of the dicing die bonding film, or carrying out the dicing on the parts of the die bonding film in the dicing process and separating it through an expanding process. Therefore, the present invention may regulate physical properties of films so as to have the maximized adhesive property, pick-up property and gap filling property without any specific restriction, while controlling burr incidence in the dicing process and contamination of die. As a result, workability and reliability in a packaging process may be excellently maintained. ## Claims ### Claim 1 A method of dicing using a dicing die bonding film comprising a dicing film, of which an elongation is from 100% to 2,000%, the dicing film comprising a base film and a pressure sensitive adhesive layer formed on said base film; and a single layer of a die bonding film, of which a tensile modulus is 10 to 2,000 MPa at 25° C., the single layer being formed on said dicing film, the method comprising: a first step of adhering a wafer in direct contact with the die bonding film; a second step of carrying out dicing to a depth that the die bonding film is not completely cut; and a third step of expanding the dicing die bonding film to completely separate the die bonding film. ### Claim 2 (depends on 1) The method according to claim 1, wherein the dicing in the second step is carried out at a level of 50 to 99% of the die bonding film thickness. ### Claim 3 (depends on 1) The method according to claim 1, wherein the dicing in the second step is carried out at a level of 75 to 95% of the die bonding film thickness. ### Claim 4 (depends on 1) The method according to claim 1, wherein the expanding strength in the third step is regulated in a level of 60 to 90% of the yield strength of the base film in the dicing film. ### Claim 5 (depends on 1) The method according to claim 1, wherein the expanding ratio in the third step is controlled beyond the yield elongation of the base film in the dicing film. ### Claim 6 (depends on 5) The method according to claim 5, wherein the expanding ratio in the third step is controlled below the tensile strain at the beginning point that the tensile strength again increases after the yield point in a tensile curve of the base film in the dicing film. ### Claim 7 A method of dicing using a dicing die bonding film comprising a dicing film, of which an elongation is from 100% to 2,000%, the dicing film comprising a polyolefin film and a pressure sensitive adhesive layer formed on said polyolefin film; and a single layer of a die bonding film, of which a tensile modulus is 10 to 2,000 MPa at 25° C., the single layer being formed on said dicing film, the method comprising: a first step of adhering a wafer in direct contact with the die bonding film; a second step of carrying out wafer dicing to a depth that the die bonding film is not completely cut; and a third step of expanding the dicing die bonding film to completely separate the die bonding film. ### Claim 8 (depends on 7) The method according to claim 7, wherein the expanding strength in the third step is 600 to 1,350 gf. ### Claim 9 (depends on 7) The method according to claim 7, wherein the expanding ratio in the third step is 8 to 30%. ### Claim 10 (depends on 1) A method of packaging a semiconductor comprising: (1) a step of picking up a semiconductor chip prepared by carrying out the dicing method of claim 1; (2) a step of bonding the picked-up semiconductor chip to a substrate for semiconductor; (3) a step of connecting the semiconductor chip to the substrate for semiconductor with an electric connecting means; and (4) a step of molding the prepared package with a sealant. ### Claim 11 (depends on 7) A method of packaging a semiconductor comprising: (1) a step of picking up a semiconductor chip prepared by carrying out the dicing method of claim 7; (2) a step of bonding the picked-up semiconductor chip to a substrate for semiconductor; (3) a step of connecting the semiconductor chip to the substrate for semiconductor with an electric connecting means; and (4) a step of molding the prepared package with a sealant.