# US 8,541,287 B2 · Laser processing method for wafer > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 8,541,287 B2 - Document ID: US8541287B2 - Status: Granted - Kind: B2 - Application number: 13/534,220 - Filed: 2012-06-27 - Published: 2013-06-27 - Granted: 2013-09-24 - Earliest claimed: 2011-12-26 - Assignees: Disco Corporation - Applicants: Kazuma Sekiya - Inventors: Kazuma Sekiya - Web page: https://patentgrep.com/patent/US8541287B2 ## CPC - H10P 34/42: with electromagnetic radiation, e.g. laser annealing (laser cutting H10P54/20) - B23K 26/0006: {taking account of the properties of the material involved (B23K26/32, B23K26/40 take precedence)} - B23K 26/032: {using optical means} - B23K 26/034: {Observing the temperature of the workpiece} - B23K 26/0853: {Devices involving movement of the workpiece in at least two axial directions, e.g. in a plane} - B23K 26/53: for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks - H10H 20/01: Manufacture or treatment - B23K 2101/40: Semiconductor devices - B23K 2103/56: {being semiconducting} - H10H 20/034: {of coatings} - H10P 54/00: Cutting or separating of wafers, substrates or parts of devices - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - B23K: SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS ## Abstract A wafer has a device area where a plurality of devices are formed, and a peripheral marginal area surrounding the device area. These devices are formed on the front side of the wafer so as to be partitioned by a plurality of division lines. A modified layer is formed by applying a laser beam along the division lines with the focal point of the laser beam set inside the wafer, thereby forming a modified layer as a division start point inside the wafer along each division line. The wafer is transported to a position where the next step is to be performed. In the modified layer forming step, the modified layer is not formed in the peripheral marginal area of the wafer to thereby form a reinforcing portion in the peripheral marginal area. Accordingly, breakage of the wafer from the modified layer in the transporting step can be prevented. ## Claims ### Claim 1 A processing method for a wafer having a device area where a plurality of devices are formed and an annular peripheral marginal area surrounding said device area, said plurality of devices being respectively formed in a plurality of regions partitioned by a plurality of division lines formed on a front side of said wafer, said processing method comprising: a modified layer forming step of holding said wafer on a chuck table in the condition where a back side of said wafer is exposed and applying a laser beam having a transmission wavelength to said wafer toward the back side of said wafer along said division lines in the condition where the focal point of said laser beam is set inside said wafer, thereby forming a modified layer as a division start point inside said wafer along each division line, wherein during said modified layer forming step, said laser beam is only applied to said wafer is said device area and is not applied to said wafer in said annular peripheral marginal area; and a transporting step of unloading said wafer from said chuck table and transporting said wafer to a position where a step to be next performed; wherein said modified layer is not formed in said annular peripheral marginal area of said wafer in said modified layer forming step to thereby form an annular reinforcing portion in said annular peripheral marginal area. ### Claim 2 (depends on 1) The processing method for a wafer according to claim 1, further comprising a dividing step of applying an external force to said division lines of said wafer to thereby divide said wafer into said individual devices after performing said modified layer forming step. ### Claim 3 A processing method for a wafer having a device area where a plurality of devices are formed and a peripheral marginal area surrounding said device area, said plurality of devices being respectively formed in a plurality of regions partitioned by a plurality of division lines formed on a front side of said wafer, said processing method comprising: a modified layer forming step of holding said wafer on a chuck table in the condition where a back side of said wafer is exposed and applying a laser beam having a transmission wavelength to said wafer toward the back side of said wafer along said division lines in the condition where the focal point of said laser beam is set inside said wafer, thereby forming a modified layer as a division start point inside said wafer along each division line; and a transporting step of unloading said wafer from said chuck table and transporting said wafer to a position where a step to be next performed; wherein said modified layer is not formed in said peripheral marginal area of said wafer in said modified layer forming step to thereby form a reinforcing portion in said peripheral marginal area; wherein: said wafer comprises an optical device wafer composed of a sapphire substrate and a plurality of optical devices formed on a front side of said sapphire substrate in a plurality of regions partitioned by a plurality of division lines; and said step to be next performed after performing said transporting step includes a back processing step of forming a reflection film on a back side of said optical device wafer. ### Claim 4 (depends on 3) The processing method for a wafer according to claim 3, further comprising a dividing step of applying an external force to said division lines of said wafer to thereby divide said wafer into said individual devices after performing said modified layer forming step.