# US 8,541,269 B2 · Native devices having improved device characteristics and methods for fabrication > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 8,541,269 B2 - Document ID: US8541269B2 - Status: Granted - Kind: B2 - Application number: 12/770,191 - Filed: 2010-04-29 - Published: 2011-11-03 - Granted: 2013-09-24 - Earliest claimed: 2010-04-29 - Assignees: QUALCOMM Incorporated - Applicants: Shashank S. Ekbote; Rongtian Zhang - Inventors: Shashank S. Ekbote; Rongtian Zhang - Web page: https://patentgrep.com/patent/US8541269B2 ## CPC - H10D 30/601: {having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs (lightly doped source or drain extensions for TFTs H10D30/6715)} - H10D 30/0218: {having pocket halo regions selectively formed at the sides of the gates} - H10D 30/022: {having lightly-doped source or drain extensions selectively formed at the sides of the gates} - H10D 62/371: {Inactive supplementary semiconductor regions, e.g. for preventing punch-through, improving capacity effect or leakage current} - H10P 30/221: {characterised by the angle between the ion beam and the mask} - H10P 30/222: {characterised by the angle between the ion beam and the crystal planes or the main crystal surface (characterised by the angle between the ion beam and the mask H10P30/221)} - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract A method for fabricating a native device is presented. The method includes forming a gate structure over a substrate starting at an outer edge of an inner marker region, where the gate structure extends in a longitudinal direction, and performing MDD implants, where each implant is performed using a different orientation with respect to the gate structure, performing pocket implants, where each implant is performed using a different orientation with respect to the gate structure, and concentrations of the pocket implants vary based upon the orientations. A transistor fabricated as a native device, is presented, which includes an inner marker region, an active outer region which surrounds the inner marker region, a gate structure coupled to the inner marker region, and first and second source/drain implants located within the active outer region and interposed between the first source/drain implant and the second source/drain implant. ## Claims ### Claim 1 A method for fabricating a native device, comprising: providing a substrate; forming on the substrate an inner marker region surrounded by an active outer region; forming a gate structure having a central portion over the inner marker region and first and second end portions projecting from the inner marker region over the active outer region, the gate structure extending in a longitudinal direction; performing Medium Doped Drain (MDD) implants in the substrate, wherein each implant is performed using a different orientation with respect to the longitudinal direction; and performing pocket implants in the substrate, wherein each implant is performed using a different orientation with respect to the longitudinal direction, and further wherein concentrations of the pocket implants vary based upon the orientations. ### Claim 2 (depends on 1) The method according to claim 1, wherein performing the source drain implants further comprises: performing the MDD implants from a first set of orientations which are substantially parallel to the longitudinal direction of the gate structure; and performing the MDD implants from a second set of orientations which are substantially perpendicular to the longitudinal direction of the gate structure. ### Claim 3 (depends on 2) The method according to claim 2, wherein performing the pocket implants further comprises: performing the pocket implants from the first set of orientations which are substantially parallel to the longitudinal direction of the gate structure; and performing the pocket implants from the second set of orientations which are substantially perpendicular to the longitudinal direction of the gate structure. ### Claim 4 (depends on 3) The method according to claim 3, and further comprising: forming photo-resists over the substrate which are laterally spaced from the gate structure in a direction traverse to the longitudinal direction. ### Claim 5 (depends on 4) The method according to claim 4, wherein a vertical extent of the photo-resists obstruct the pocket implants performed from the first set of orientations to reduce the concentrations thereof. ### Claim 6 (depends on 1) The method according to claim 1, wherein the MDD implants are performed at a first angle into the gate structure, and the pocket implants are performed at a second angle into the gate structure, wherein the second angle is larger than the first angle. ### Claim 7 (depends on 6) The method according to claim 6, wherein the first angle and the second angle are measured from a vertical surface of the gate structure, wherein the vertical surface is substantially perpendicular to the substrate. ### Claim 8 (depends on 7) The method according to claim 7, wherein the first angle is between zero and three degrees, and the second angle is between 15 and 60 degrees. ### Claim 9 (depends on 6) The method according to claim 6, further comprising: forming photo-resists over the substrate which are laterally spaced from the gate structure in a direction traverse to the longitudinal direction, wherein the heights of the photo-resists impede the pocket implants which are performed from orientations that are substantially perpendicular to the longitudinal direction. ### Claim 10 (depends on 1) The method according to claim 1, wherein each MDD implant is performed using a different orientation with respect to the longitudinal direction and each pocket implant is performed using a different orientation with respect to the longitudinal direction. ### Claim 11 A method for fabricating a native device, comprising: steps for providing a substrate; steps for forming on the substrate an inner marker region surrounded by an active outer region; steps for forming a gate structure having a central portion over the inner marker region and first and second end portions projecting from the inner marker region over the active outer region, the gate structure extending in a longitudinal direction; steps for performing Medium Doped Drain (MDD) implants in the substrate, wherein each implant is performed using a different orientation with respect to the longitudinal direction; and steps for performing pocket implants in the substrate, wherein each implant is performed using a different orientation with respect to the longitudinal direction, and further wherein concentrations of the pocket implants vary based upon the orientations. ### Claim 12 (depends on 11) The method according to claim 11, wherein performing the source drain implants further comprises: step for performing the MDD implants from a first set of orientations which are substantially parallel to the longitudinal direction of the gate structure; and step for performing the MDD implants from a second set of orientations which are substantially perpendicular to the longitudinal direction of the gate structure. ### Claim 13 (depends on 12) The method according to claim 12, wherein performing the pocket implants further comprises: step for performing the pocket implants from the first set of orientations which are substantially parallel to the longitudinal direction of the gate structure; and step for performing the pocket implants from the second set of orientations which are substantially perpendicular to the longitudinal direction of the gate structure. ### Claim 14 (depends on 13) The method according to claim 13, and further comprising: step for forming photo-resists over the substrate which are laterally spaced from the gate structure in a direction traverse to the longitudinal direction. ### Claim 15 (depends on 14) The method according to claim 14, further comprising: step for forming photo-resists over the substrate which are laterally spaced from the gate structure in a direction traverse to the longitudinal direction, wherein the heights of the photo-resists impede the pocket implants which are performed from orientations that are substantially perpendicular to the longitudinal direction. ### Claim 16 (depends on 11) The method according to claim 11, wherein each MDD implant is performed using a different orientation with respect to the longitudinal direction and each pocket implant is performed using a different orientation with respect to the longitudinal direction.