# US 8,541,268 B2 · Method for manufacturing thin film transistor

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- Number: US 8,541,268 B2
- Document ID: US8541268B2
- Status: Granted
- Kind: B2
- Application number: 13/315,430
- Filed: 2011-12-09
- Published: 2013-01-17
- Granted: 2013-09-24
- Earliest claimed: 2011-07-13
- Assignees: Chunghwa Picture Tubes, Ltd.
- Applicants: Chan-Chang Liao; Hsien-Kun Chiu; Wei-Pang Yen; Chao-Huan Hsu
- Inventors: Chan-Chang Liao; Hsien-Kun Chiu; Wei-Pang Yen; Chao-Huan Hsu
- Web page: https://patentgrep.com/patent/US8541268B2

## CPC

- H10D 86/0231: {using masks, e.g. half-tone masks}
- H10D 30/0314: {of lateral top-gate TFTs comprising only a single gate}
- H10D 30/0321: {comprising silicon, e.g. amorphous silicon or polysilicon}
- H10D 30/6758: {characterised by the insulating substrates}
- H10D 86/441: {Interconnections, e.g. scanning lines}
- H10D 86/60: wherein the TFTs are in active matrices
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

A thin film transistor and a method for manufacturing the same are provided. A top-gate thin film transistor is fabricated by a process using two gray-tone photomasks and a lift-off method. Therefore, the method can save cost of photomasks and processes comparing to a conventional fabrication method.

## Claims

### Claim 1

A method for manufacturing a thin film transistor, comprising:
sequentially forming a transparent conductive layer, a channel layer, an ohmic contact layer, a first conductive layer on a substrate;
forming a first photoresist layer on the first conductive layer by a first gray-tone photomask to expose the first conductive layer, wherein the first photoresist layer has a first region, a second region and a third region, the third region has a thickness greater than the second region, and the second region has a thickness greater than the first region:
removing the exposed first conductive layer, and the channel layer, the ohmic contact layer and the transparent conductive layer thereunder;
removing the first photoresist layer in the first region;
removing the exposed first conductive layer, and the ohmic contact layer and the channel layer thereunder to expose the transparent conductive layer as a pixel electrode;
removing the first photoresist layer in the second region;
removing the exposed first conductive layer and the ohmic contact layer thereunder to expose the channel layer, wherein the first conductive layer disposed on opposite sides of the channel layer is acted as a source electrode and a drain electrode;
removing the first photoresist layer in the third region;
sequentially forming an insulating layer on the source electrode, the drain electrode, the channel layer, and the transparent conductive layer;
forming a second photoresist layer on the insulating layer by a second gray-tone photomask to expose a part of the insulating layer, wherein the second photoresist layer has a fourth region disposed on the channel layer and a fifth region, and the fourth region has a thickness less than the fifth region;
removing the exposed part of the insulating layer to form a contact window to expose a part of the drain electrode and a part of the transparent conductive layer;
removing the second photoresist layer in the fourth region expose the insulating layer disposed between the source electrode and the drain electrode;
forming a second conductive layer on the second photoresist layer, the insulating layer, and the contact window; and
removing the second photoresist layer and the second conductive layer thereon to leave a part of the second conductive layer to be a bridging conductive layer for electrically connecting the drain electrode and the pixel electrode, and another part of the second conductive layer to be a gate electrode disposing on the insulating layer between the source electrode and the drain electrode.

### Claim 2 (depends on 1)

The method of claim 1. wherein the first photoresist layer is a positive photoresist.

### Claim 3 (depends on 1)

The method of claim 1, wherein the second photoresist layer is a positive photoresist.

### Claim 4 (depends on 1)

The method of claim 1, wherein the step of removing the second photoresist layer and the second conductive layer thereon comprises using a lift-off method.

### Claim 5 (depends on 4)

The method of claim 4, wherein the lift-off method comprises using a solution to dissolve the second photoresist layer and simultaneously removing the second conductive layer thereon.

### Claim 6 (depends on 1)

The method of claim 1, wherein the second photoresist layer has a thickness of 1.5-2.0 μm.

### Claim 7 (depends on 1)

The method of claim 1, wherein the insulating layer is a silicon oxide layer or a silicon nitride layer.

### Claim 8 (depends on 1)

The method of claim 1, wherein the channel layer is made of an undoped semiconductor material.

### Claim 9 (depends on 1)

The method of claim 1, wherein the ohmic contact layer is made of a doped semiconductor material.