# US 8,541,257 B2 · Aligned polymers for an organic TFT

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- Number: US 8,541,257 B2
- Document ID: US8541257B2
- Status: Granted
- Kind: B2
- Application number: 12/888,180
- Filed: 2010-09-22
- Published: 2011-01-13
- Granted: 2013-09-24
- Earliest claimed: 1999-06-21
- Assignees: Cambridge University Technical Services Limited
- Applicants: Henning Sirringhaus; Richard Henry Friend; Richard John Wilson
- Inventors: Henning Sirringhaus; Richard Henry Friend; Richard John Wilson
- Web page: https://patentgrep.com/patent/US8541257B2

## CPC

- H10K 85/731: {Liquid crystalline materials}
- H10K 10/468: {characterised by the gate dielectrics}
- H10K 71/191: {characterised by provisions for the orientation or alignment of the layer to be deposited}
- H10K 71/211: {by selective transformation of an existing layer}
- H10K 85/113: {Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene}
- H10K 85/151: {Copolymers}
- H10K 85/615: {Polycyclic condensed aromatic hydrocarbons, e.g. anthracene}
- H10K 85/624: {containing six or more rings}
- C09K 2323/00: Functional layers of liquid crystal optical display excluding electroactive liquid crystal layer characterised by chemical composition
- C09K 2323/02: Alignment layer characterised by chemical composition
- C09K 2323/06: Substrate layer characterised by chemical composition
- H10K 10/464: {Lateral top-gate IGFETs comprising only a single gate}
- H10K 10/466: {Lateral bottom-gate IGFETs comprising only a single gate}
- H10K 85/115: {Polyfluorene; Derivatives thereof}
- Y10T 428/21: Circular sheet or circular blank
- Y10T 428/31504: Composite [nonstructural laminate]
- Y10T 428/3154: Of fluorinated addition polymer from unsaturated monomers
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES
- C09K: MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- Y10T: TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION

## Abstract

A method for forming an electronic device having a semiconducting active layer comprising a polymer, the method comprising aligning the chains of the polymer parallel to each other by bringing the polymer into a liquid-crystalline phase.

## Claims

### Claim 1

A method for forming a transistor comprising the step of forming an active interface of the transistor between a semiconductive layer and a gate insulator layer by solution deposition of a second polymer layer on top of a solution-processed polymer layer that has not been converted into an insoluble form prior to the deposition of the second polymer layer.

### Claim 2 (depends on 1)

A method as claimed in claim 1 wherein the second layer forms the gate insulator of the transistor.

### Claim 3 (depends on 1)

A method as claimed in claim 1, wherein the second layer comprises PVP.

### Claim 4 (depends on 1)

A method as claimed in claim 1, wherein the said semiconductive layer is the said solution-processed polymer layer.

### Claim 5 (depends on 1)

A method as claimed in claim 1, wherein the said solution-processed polymer layer is soluble in a non-polar organic solvent, but is insoluble in a polar solvent.

### Claim 6 (depends on 5)

A method as claimed in claim 5, wherein the second polymer layer is deposited from a polar organic solvent, in which the said solution-processed polymer layer is not soluble.

### Claim 7 (depends on 1)

A method as claimed in claim 1, wherein the second polymer layer is deposited from an alcohol, a protic polar solvent such as water or an aprotic polar solvent such as DMF.

### Claim 8 (depends on 1)

A method as claimed in claim 1, wherein a source-drain and/or gate electrode of the transistor is also formed from solution.

### Claim 9 (depends on 1)

A method according to claim 1, wherein the second layer is the gate insulator layer, and the solution-processed polymer layer is a uniaxially aligned liquid crystal polymer film.

### Claim 10

A method for forming a transistor comprising the step of forming an active interface of the transistor between a semiconductive layer and a gate insulator layer by solution deposition of a second polymer layer on top of a solution-processed polymer layer that has not been converted into an insoluble form prior to the deposition of the second polymer layer,
wherein the forming comprises omission of an alignment layer to induce polymer chain alignment in the semiconductive layer.