# US 8,541,158 B2 · Positive resist compositions and patterning process

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- Number: US 8,541,158 B2
- Document ID: US8541158B2
- Status: Granted
- Kind: B2
- Application number: 13/013,143
- Filed: 2011-01-25
- Published: 2011-07-28
- Granted: 2013-09-24
- Earliest claimed: 2010-01-26
- Assignees: Shin-Etsu Chemical Co., Ltd.
- Applicants: Wataru Kusaki; Takeshi Kinsho; Takeru Watanabe
- Inventors: Wataru Kusaki; Takeshi Kinsho; Takeru Watanabe
- Web page: https://patentgrep.com/patent/US8541158B2

## CPC

- G03F 7/0397: {the macromolecular compound having an alicyclic moiety in a side chain}
- G03F 7/2041: {in the presence of a fluid, e.g. immersion; using fluid cooling means}
- G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G)

## Abstract

A positive resist composition is provided comprising an acid generator, a resin component which generates resin-solubilizing groups under the action of acid so that the resin component becomes soluble in an alkaline developer, at least some resin-solubilizing groups being carboxyl groups, and a compound for activating or condensing a carboxyl group. When processed by the lithography, the resist composition forms a resist pattern having a very high resolution and good mask fidelity.

## Claims

### Claim 1

A positive resist composition comprising:
a compound which generates an acid in response to actinic light or radiation,
a resin component which becomes soluble in an alkaline developer under the action of an acid, the resin component generating resin-solubilizing groups under the action of acid, at least some of the resin-solubilizing groups being carboxyl groups, and
a compound for activating or condensing a carboxyl group, in the form of a carbodiimide or triazine base condensing agent.

### Claim 2 (depends on 1)

The resist composition of claim 1, further comprising an alcohol compound, thiol compound, primary or secondary amine, carboxylic acid amide, or nitrogen-containing compound having a carboxyl group.

### Claim 3 (depends on 1)

The resist composition of claim 1, further comprising a quencher as an acid diffusion regulator.

### Claim 4 (depends on 1)

The resist composition of claim 1, further comprising a surfactant which is insoluble in water and soluble in the alkaline developer.

### Claim 5 (depends on 1)

A process for forming a pattern, comprising the steps of applying the positive resist composition of claim 1 onto a substrate and heat treating to form a resist film, exposing the resist film to high-energy radiation through a photomask, optionally heat treating the film, and developing the exposed film with a developer.

### Claim 6 (depends on 1)

A process for forming a pattern, comprising the steps of applying the positive resist composition of claim 1 onto a substrate and heat treating to form a resist film, applying onto the resist film a protective coating which is insoluble in water and soluble in an alkaline developer, exposing the resist film to high-energy radiation through a photomask while a high refractive index liquid having a refractive index of at least 1.0 is interposed between the substrate and a projection lens, optionally heat treating the film, and developing the exposed film with a developer.

### Claim 7 (depends on 1)

A process for forming a pattern, comprising the steps of applying the positive resist composition of claim 1 onto a substrate and heat treating to form a resist film, writing an image in the resist film with electron beam, optionally heat treating the film, and developing the exposed film with a developer.