# US 8,541,147 B2 · System and method of selective optical pattern enhancement for semiconductor manufacturing > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 8,541,147 B2 - Document ID: US8541147B2 - Status: Granted - Kind: B2 - Application number: 13/035,900 - Filed: 2011-02-25 - Published: 2011-09-08 - Granted: 2013-09-24 - Earliest claimed: 2010-03-05 - Assignees: Semiconductor Manufacturing International (Shanghai) Corporation - Applicants: Chi Yuan Hung - Inventors: Chi Yuan Hung - Web page: https://patentgrep.com/patent/US8541147B2 ## CPC - G03F 7/20: Exposure; Apparatus therefor (photographic printing apparatus for making copies G03B27/00) - G03F 1/36: Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes - G03F 1/70: Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging - G03F 7/70441: {Optical proximity correction [OPC]} - G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G) ## Abstract System and method of selective optical pattern enhancement for semiconductor manufacturing. A method for performing a photolithography process includes providing a reticle pattern for a photomask, the reticle pattern including one or more active areas, the photomask including at least a first active area and a first insulation area. The method also includes identifying a first structure pattern defined by the reticle pattern. Additionally, the method includes defining a block area covering the first structure, the block area being positioned within the active area. The method further includes applying at least a first optical proximity correction to the reticle pattern to form a corrected pattern, the first optical proximity correction being restricted to the block area. Also, the method includes transferring the corrected pattern to a wafer. ## Claims ### Claim 1 A method for performing a photolithography process, the method comprising: providing a reticle pattern for a photomask, the reticle pattern including one or more active areas, the photomask including at least a first active area and a first insulation area; identifying a first structure pattern defined by the reticle pattern; defining a block area covering the first structure pattern, the block area being positioned within the first active area; applying a first optical proximity correction to the reticle pattern to form a corrected pattern, the first optical proximity correction being restricted to the block area; and transferring the corrected pattern to a wafer. ### Claim 2 (depends on 1) The method of claim 1 further comprising enhancing the corrected pattern using a resolution enhancement technique. ### Claim 3 (depends on 1) The method of claim 1 wherein the block area is less than 10 percent of the photomask. ### Claim 4 (depends on 1) The method of claim 1 wherein the first structure pattern comprises a square corner. ### Claim 5 (depends on 1) The method of claim 1 wherein the structure is associated with a channel length of less than 90 nm. ### Claim 6 (depends on 1) The method of claim 1 wherein the first structure pattern comprises a L-shaped structure. ### Claim 7 (depends on 1) The method of claim 1 further comprising performing a simulation associated with the first optical proximity correction. ### Claim 8 (depends on 1) The method of claim 1 wherein the first optical proximity correction comprises a rule-based optical proximity correction. ### Claim 9 (depends on 1) The method of claim 1 wherein the first optical proximity correction comprises a model-based optical proximity correction. ### Claim 10 (depends on 1) The method of claim 1 further comprising defining edge segments within the first structure pattern. ### Claim 11 (depends on 1) The method of claim 1 further comprising storing the corrected pattern. ### Claim 12 A method for performing a photolithography process, the method comprising: providing a reticle pattern for a photomask, the reticle pattern including one or more active areas, the photomask including at least a first active area and a first polysilicon area; identifying a first structure pattern defined by the reticle pattern; defining a block area covering the first structure pattern, the block area being covering at least a portion of the first polysilicon area and a portion of the active area, the block area being less than 10% of the photomask; applying at least a first RET process to the reticle pattern to form a corrected pattern, the first RET process being restricted to the block area; and transferring the corrected pattern to a wafer. ### Claim 13 (depends on 11) The method of claim 11 further comprising analyzing the reticle pattern. ### Claim 14 (depends on 11) The method of claim 11 wherein the first structure pattern is associated with a critical dimension. ### Claim 15 (depends on 11) The method of claim 11 wherein the first structure pattern is associated with a geometric pattern. ### Claim 16 (depends on 11) The method of claim 11 wherein the first RET process comprises enlarging a process window associated with the block area. ### Claim 17 (depends on 11) The method of claim 11 further comprising identifying a poly pattern within the block area. ### Claim 18 (depends on 16) The method of claim 16 further comprising shrinking the poly pattern by a predetermined ratio. ### Claim 19 (depends on 17) The method of claim 17 wherein the RET process is used to at least reduce rounding effects. ### Claim 20 (depends on 17) The method of claim 17 further comprising performing an OPC process on an active area region within the block area.