# US 8,540,893 B2 · Chemical mechanical polishing composition and methods relating thereto

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- Number: US 8,540,893 B2
- Document ID: US8540893B2
- Status: Granted
- Kind: B2
- Application number: 12/185,600
- Filed: 2008-08-04
- Published: 2010-02-04
- Granted: 2013-09-24
- Earliest claimed: 2008-08-04
- Assignees: Rohm and Haas Electronic Materials CMP Holdings, Inc.
- Applicants: Tirthankar Ghosh; Terence M. Thomas; Hongyu Wang; Scott A. Ibbitson
- Inventors: Tirthankar Ghosh; Terence M. Thomas; Hongyu Wang; Scott A. Ibbitson
- Web page: https://patentgrep.com/patent/US8540893B2

## CPC

- C09K 13/00: Etching, surface-brightening or pickling compositions (for glass C03C15/00, {C03C25/66; for mortars, concrete, artificial or natural stone or ceramics C04B41/5338}; for metallic material C23F, C23G1/00, C25F1/00; {for semi-conductors H10P52/40})
- C09G 1/02: containing abrasives or grinding agents {(abrasives as such C09K3/14; polishing of semi-conductors H10P52/40)}
- C09G 1/04: Aqueous dispersions (C09G1/02 takes precedence)
- H10P 52/402: {of semiconductor materials}
- H10P 52/403: {of conductive or resistive materials}
- C09K: MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09G: POLISHING COMPOSITIONS (French polish C09F11/00); SKI WAXES
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

A chemical mechanical polishing composition useful for chemical mechanical polishing of a patterned semiconductor wafer containing a nonferrous metal. The chemical mechanical polishing composition comprises an inhibitor for the nonferrous metal; a copolymer of poly(ethylene glycol)methyl ether (meth)acrylate and 1-vinylimidazole; and water.

## Claims

### Claim 1

A chemical mechanical polishing composition useful for chemical mechanical polishing of a patterned semiconductor wafer containing a copper interconnect metal, comprising: 0.01 to 15 wt % of an inhibitor for the copper interconnect metal; 0.005 to 5 wt % of a copolymer of poly(ethylene glycol) methyl ether (meth)acrylate and 1-vinylimidazole; and water; wherein the chemical mechanical polishing composition has an acidic pH.

### Claim 2 (depends on 1)

The chemical mechanical polishing composition of claim 1, wherein the copolymer is a 9:1 to 1:9 (weight basis) copolymer of poly(ethylene glycol) methyl ether methacrylate and 1-vinylimidazole, wherein the copolymer has a weight average molecular weight of 5,000 to 1,000,000.

### Claim 3 (depends on 1)

The chemical mechanical polishing composition of claim 1, further comprising 1 to 25 wt % of an oxidizer.

### Claim 4 (depends on 1)

The chemical mechanical polishing composition of claim 1, further comprising 0.001 to 15 wt % of a water soluble cellulose.

### Claim 5 (depends on 1)

The chemical mechanical polishing composition of claim 1, further comprising 0.01 to 15 wt % of a complexing agent.

### Claim 6 (depends on 1)

The chemical mechanical polishing composition of claim 1, further comprising 0.01 to 15 wt % of a phosphorus-containing compound.

### Claim 7 (depends on 1)

The chemical mechanical polishing composition of claim 1, wherein the chemical mechanical polishing composition is abrasive-free.

### Claim 8 (depends on 1)

The chemical mechanical polishing composition of claim 1, further comprising 0.05 to 20 wt % of a water soluble acid compound of formula I as follows:
wherein R is a hydrogen or a carbon-containing compound; 0.01 to 15 wt % of a complexing agent for the copper interconnect metal; 0.01 to 15 wt % of a phosphorus compound; 0 to 25 wt % of an oxidizer.

### Claim 9

A chemical mechanical polishing composition useful for chemical mechanical polishing of a patterned semiconductor wafer containing a nonferrous metal, comprising: 0.01 to 15 wt % of an inhibitor for the nonferrous metal; 0.005 to 5 wt % of a copolymer of poly(ethylene glycol) methyl ether (meth)acrylate and 1-vinylimidazole; and water; wherein the chemical mechanical polishing composition has an acidic pH.