# US 8,540,851 B2 · Physical vapor deposition with impedance matching network

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- Number: US 8,540,851 B2
- Document ID: US8540851B2
- Status: Granted
- Kind: B2
- Application number: 12/389,253
- Filed: 2009-02-19
- Published: 2010-08-19
- Granted: 2013-09-24
- Earliest claimed: 2009-02-19
- Assignees: FUJIFILM Corporation
- Applicants: Youming Li; Jeffrey Birkmeyer; Takamichi Fujii; Takayuki Naono; Yoshikazu Hishinuma
- Inventors: Youming Li; Jeffrey Birkmeyer; Takamichi Fujii; Takayuki Naono; Yoshikazu Hishinuma
- Web page: https://patentgrep.com/patent/US8540851B2

## CPC

- C23C 14/35: by application of a magnetic field, e.g. magnetron sputtering {(C23C14/3457 takes precedence)}
- C23C 14/088: {of the type ABO3 with A representing alkali, alkaline earth metal or Pb and B representing a refractory or rare earth metal}
- C23C 14/345: {using substrate bias}
- H01J 37/32651: {Shields, e.g. dark space shields, Faraday shields}
- H01J 37/3408: {Planar magnetron sputtering}
- H01J 37/3444: {Associated circuits}
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)
- H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H)

## Abstract

A method of physical vapor deposition includes applying a radio frequency signal to a cathode in a physical vapor deposition apparatus, wherein the cathode includes a sputtering target, electrically connecting a chuck in the physical vapor deposition apparatus to an impedance matching network, wherein the chuck supports a substrate, and wherein the impedance matching network includes at least one capacitor, and depositing material from the sputtering target onto the substrate.

## Claims

### Claim 1

A method of physical vapor deposition comprising:
applying, using a first radio frequency power source, a radio frequency signal to a cathode in a vacuum chamber of a physical vapor deposition apparatus, wherein the cathode includes a dielectric sputtering target;
electrically connecting a chuck in the physical vapor deposition apparatus to an impedance matching network, wherein the chuck supports a dielectric substrate, and wherein the impedance matching network includes at least one capacitor;
configuring the impedance matching network such that a positive self bias direct current voltage is generated on the dielectric substrate, wherein the positive self bias direct current voltage is between 10V and 100V; and
depositing material from the dielectric sputtering target onto the dielectric substrate.

### Claim 2 (depends on 1)

The method of claim 1, wherein the impedance matching network includes a variable tune capacitor and wherein configuring the impedance matching network comprises adjusting a capacitance of the variable tune capacitor such that the positive self bias direct current voltage is generated on the dielectric substrate.

### Claim 3 (depends on 2)

The method of claim 2, wherein the adjusting the capacitance comprises adjusting the capacitance to have a magnitude of between 10 pF and 500 pF.

### Claim 4 (depends on 1)

The method of claim 1, wherein the positive self bias direct current voltage is approximately 60V.

### Claim 5 (depends on 1)

The method of claim 1, wherein configuring the impedance matching network comprises selecting a capacitance for the at least one capacitor such that the positive self bias direct current voltage is generated on the dielectric substrate.

### Claim 6 (depends on 5)

The method of claim 5, wherein the capacitance is selected to be between 10 pF and 500 pF.

### Claim 7 (depends on 5)

The method of claim 5, wherein the positive self bias direct current voltage is approximately 60V.

### Claim 8 (depends on 1)

The method of claim 1, wherein the radio frequency signal has a radio frequency power having a magnitude of between 1000 W and 5000 W.

### Claim 9 (depends on 8)

The method of claim 8, wherein the radio frequency power has a magnitude of approximately 3000 W.

### Claim 10 (depends on 1)

The method of claim 1, wherein the dielectric sputtering target comprises lead zirconate titanate (“PZT”).

### Claim 11 (depends on 1)

The method of claim 1, wherein depositing the material from the dielectric sputtering target onto the substrate comprises creating a dielectric thin film having a thickness of between 2000 Å and 10 μm.

### Claim 12 (depends on 11)

The method of claim 11, wherein the dielectric thin film has a thickness of between 2 μm and 4 μm.

### Claim 13 (depends on 1)

The method of claim 1, wherein depositing the material from the dielectric sputtering target onto the dielectric substrate comprises creating a dielectric thin film having a (100) crystalline structure.

### Claim 14 (depends on 1)

The method of claim 1, wherein the impedance matching network does not receive power from any radio frequency power source through a current path external to the vacuum chamber of the physical vapor deposition apparatus.

### Claim 15

A physical vapor deposition apparatus comprising:
a vacuum chamber having side walls;
a cathode inside the vacuum chamber, wherein the cathode is configured to include a dielectric sputtering target;
a radio frequency power supply configured to apply a radio frequency signal to the cathode;
an anode inside and electrically connected to the side walls of the vacuum chamber;
an impedance matching network; and
a chuck inside the vacuum chamber, wherein the chuck is configured to support a dielectric substrate and the chuck is electrically connected to the impedance matching network, and wherein the impedance matching network is configured such that a positive self bias direct current voltage is generated on the dielectric substrate when the radio frequency signal is applied to the cathode by the radio frequency power supply, wherein the positive self bias direct current voltage is between 10V and 100V.

### Claim 16 (depends on 15)

The apparatus of claim 15, wherein the impedance matching network comprises at least one capacitor.

### Claim 17 (depends on 16)

The apparatus of claim 16, wherein the impedance matching network comprises:
an input terminal electrically connected to the chuck;
a first capacitor electrically connected to ground;
an inductor electrically connected between the input terminal and the first capacitor; and
a second capacitor electrically connected between the input terminal and ground, the second capacitor being in parallel with the inductor and the first capacitor.

### Claim 18 (depends on 15)

The apparatus of claim 15, wherein the impedance matching network comprises a variable tune capacitor and a shunt capacitor.

### Claim 19 (depends on 15)

The apparatus of claim 15, wherein the dielectric sputtering target comprises lead zirconate titanate (“PZT”).

### Claim 20 (depends on 15)

The apparatus of claim 15, wherein the cathode further comprises a magnetron assembly.

### Claim 21 (depends on 15)

The physical vapor deposition apparatus of claim 15, wherein the impedance matching network does not receive power from any radio frequency power source through a current path external to the vacuum chamber of the physical vapor deposition apparatus.