# US 8,540,832 B2 · Laminated ceramic electronic component and manufacturing method therefor

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- Number: US 8,540,832 B2
- Document ID: US8540832B2
- Status: Granted
- Kind: B2
- Application number: 13/004,213
- Filed: 2011-01-11
- Published: 2011-05-12
- Granted: 2013-09-24
- Earliest claimed: 2009-06-15
- Assignees: Murata Manufacturing Co., Ltd.
- Applicants: Yosuke Hirata; Hideaki Tsuji; Nagato Omori; Hiroyuki Wada; Takashi Hiramatsu; Yoshito Saito
- Inventors: Yosuke Hirata; Hideaki Tsuji; Nagato Omori; Hiroyuki Wada; Takashi Hiramatsu; Yoshito Saito
- Web page: https://patentgrep.com/patent/US8540832B2

## CPC

- H01G 4/005: Electrodes
- B32B 18/00: Layered products essentially comprising ceramics, e.g. refractory products
- C04B 35/4682: {based on BaTiO3 perovskite phase}
- C04B 35/62685: {characterised by the order of addition of constituents or additives}
- H01G 4/012: Form of non-self-supporting electrodes
- H01G 4/12: Ceramic dielectrics {(H01G4/085 takes precedence)}
- H01G 4/1209: {characterised by the ceramic dielectric material (H01G4/1272, H01G4/1281 take precedence)}
- H01G 4/30: Stacked capacitors (H01G4/33 takes precedence)
- C04B 2235/3206: Magnesium oxides or oxide-forming salts thereof
- C04B 2235/3215: Barium oxides or oxide-forming salts thereof
- C04B 2235/3224: Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide
- C04B 2235/3236: Alkaline earth titanates
- C04B 2235/3262: Manganese oxides, manganates, rhenium oxides or oxide-forming salts thereof, e.g. MnO
- C04B 2235/3418: Silicon oxide, silicic acids or oxide forming salts thereof, e.g. silica sol, fused silica, silica fume, cristobalite, quartz or flint
- C04B 2235/5445: submicron sized, i.e. from 0,1 to 1 micron
- C04B 2235/656: characterised by specific heating conditions during heat treatment
- C04B 2235/6562: Heating rate
- C04B 2235/6567: Treatment time
- C04B 2235/6582: Hydrogen containing atmosphere
- C04B 2235/6584: at an oxygen percentage below that of air
- C04B 2235/6588: Water vapor containing atmospheres
- C04B 2235/721: Carbon content
- C04B 2235/785: Submicron sized grains, i.e. from 0,1 to 1 micron
- C04B 2235/786: Micrometer sized grains, i.e. from 1 to 100 micron
- C04B 2235/79: Non-stoichiometric products, e.g. perovskites (ABO3) with an A/B-ratio other than 1
- C04B 2237/346: Titania or titanates
- C04B 2237/588: by joining layers or articles of the same composition but having different particle or grain sizes
- C04B 2237/704: of one or more of the ceramic layers or articles
- H01G: CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE (selection of specified materials as dielectric H01B3/00; capacitors having potential barriers H10D1/62, H10K10/10)
- B32B: LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- C04B: LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE {(roofing granules E04D7/005)}; CERAMICS (devitrified glass-ceramics C03C10/00); REFRACTORIES; TREATMENT OF NATURAL STONE

## Abstract

Changes in states giving rise to electrode breakage and ball formation are made less likely during firing step for sintering the laminated body, and the improvement in DC bias characteristics is achieved in laminated ceramic electronic components with a laminated body which has internal electrodes, even when ceramic layers and the internal electrodes are reduced in thickness. The laminated body is divided into a large grain region in which the ceramic has a relatively large grain diameter and a small grain region in which the ceramic has a relatively small grain diameter. The large grain region is located outside the small grain region, and a boundary surface between the large grain region and the small grain region is located inside the outer surface of the laminated body while surrounding a section in which the internal electrodes are present in the laminated body. In order to obtain the laminated body, a heat treatment is carried out in the firing step with a temperature profile in which the average rate of temperature increase from room temperature to the maximum temperature is 40° C./second or more.

## Claims

### Claim 1

A method for manufacturing a laminated ceramic electronic component, the method comprising:
providing a raw laminated body including a plurality of stacked ceramic layers and internal electrodes formed along specific interfaces between the ceramic layers; and
firing for sintering the raw laminated body,
wherein the firing is in accordance with a temperature profile in which an average rate of temperature increase is 40° C./second or more.

### Claim 2 (depends on 1)

The method for manufacturing a laminated ceramic electronic component according to claim 1, wherein the average rate of temperature increase is 100° C./second or more.

### Claim 3 (depends on 1)

The method for manufacturing a laminated ceramic electronic component according to claim 1, further comprising degreasing the raw laminated body before firing.

### Claim 4 (depends on 3)

The method for manufacturing a laminated ceramic electronic component according to claim 3, wherein the internal electrodes comprise a base metal, and the firing is carried out in an atmosphere with an excess amount of oxidizing atmosphere gas with respect to a balance oxygen partial pressure of the base metal.

### Claim 5 (depends on 4)

The method for manufacturing a laminated ceramic electronic component according to claim 4, wherein the temperature profile includes cooling after reaching the maximum temperature, and the cooling is commenced at about the time the maximum temperature is attained.

### Claim 6 (depends on 1)

The method for manufacturing a laminated ceramic electronic component according to claim 1, further comprising degreasing the raw laminated body before firing.

### Claim 7 (depends on 6)

The method for manufacturing a laminated ceramic electronic component according to claim 6, wherein the internal electrodes comprise a base metal, and the firing is carried out in an atmosphere with an excess amount of oxidizing atmosphere gas with respect to a balance oxygen partial pressure of the base metal.

### Claim 8 (depends on 7)

The method for manufacturing a laminated ceramic electronic component according to claim 7, wherein the temperature profile includes cooling after reaching the maximum temperature, and the cooling is commenced at about the time the maximum temperature is attained.

### Claim 9 (depends on 1)

The method for manufacturing a laminated ceramic electronic component according to claim 1, wherein the internal electrodes comprise a base metal, and the firing is carried out in an atmosphere with an excess amount of oxidizing atmosphere gas with respect to a balance oxygen partial pressure of the base metal.

### Claim 10 (depends on 1)

The method for manufacturing a laminated ceramic electronic component according to claim 1, wherein the temperature profile includes cooling after reaching the maximum temperature, and the cooling is commenced at about the time the maximum temperature is attained.