# US 8,540,819 B2 · Ceramic heater > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 8,540,819 B2 - Document ID: US8540819B2 - Status: Granted - Kind: B2 - Application number: 12/407,214 - Filed: 2009-03-19 - Published: 2009-09-24 - Granted: 2013-09-24 - Earliest claimed: 2008-03-21 - Assignees: NGK Insulators, Ltd. - Applicants: Takashi Kataigi; Yuji Akatsuka - Inventors: Takashi Kataigi; Yuji Akatsuka - Web page: https://patentgrep.com/patent/US8540819B2 ## CPC - C23C 16/4586: {Elements in the interior of the support, e.g. electrodes, heating or cooling devices} - C23C 16/45521: {the gas, other than thermal contact gas, being introduced the rear of the substrate to flow around its periphery} - H10P 72/0432: {mainly by conduction} - H10P 72/7614: {characterised by a plurality of individual support members, e.g. support posts or protrusions} - H10P 72/7616: {characterised by a coating, a hardness or a material} - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract A ceramic heater for a semiconductor substrate process includes a plate and a shaft. The plate includes a first base and a second base bonded to the first base. Defined on a mounting surface of the first base are: a first region having a surface contacting with a mounted substrate; a purge groove provided in the portion covered with the substrate and surrounds the first region; and a second region having a surface surrounding the purge groove. The first base has: an adsorber configured to adsorb the mounted substrate onto the surface of the first region; and multiple purge holes each penetrating from the bottom surface of the purge groove to the lower surface of the first base. The purge groove is supplied with a purge gas through the multiple purge holes. The surface of the second region is located lower than that of the first region. ## Claims ### Claim 1 A ceramic heater for a semiconductor substrate process comprising: a mounting plate on which the substrate is mounted; and a supporter configured to support the mounting plate, wherein the mounting plate includes: a first base made of a ceramic sintered body and having a mounting surface on which the substrate is mounted, and having a lower surface provided on an opposite side to the mounting surface; and a second base made of a ceramic sintered body and having an upper surface bonded to the lower surface of the first base, and having a lower surface provided on an opposite side to the upper surface, the supporter is made of a ceramic sintered body, is bonded to the lower surface of the second base, and includes a first penetration hole penetrating from one end of the supporter to the other end of the supporter, a first region, a first groove and a second region are defined on the mounting surface of the first base, the first region has a first surface contacting with the mounted substrate; the first groove is provided in a portion covered with the substrate and surrounds the first region; and the second region has a second surface directly adjacent to and surrounding the first groove, the first base has: an adsorber configured to adsorb the mounted substrate onto the first surface; and a plurality of holes each penetrating from a bottom surface of the first groove to the lower surface of the first base, at least one of the upper surface of the second base and the lower surface of the first base is provided with a second groove connected to each of the plurality of holes, the second base has a second penetration hole connected to the second groove and to the first penetration hole, the first groove is supplied with an inert gas through the first penetration hole, the second penetration hole, the second groove, and the plurality of holes, the entirety of the second surface of the second region is located lower than the first surface of the first region and higher than a bottom surface of the first groove, and wherein a portion of the second surface of the second region is covered with the mounted substrate, wherein an annular convex portion surrounds the second surface of the second region, and wherein an inside wall of the convex portion has a tapered surface that surrounds a space formed between the mounted substrate and the second surface of the second region so as to openly enlarge outward from the bottom upward. ### Claim 2 (depends on 1) The ceramic heater according to claim 1, wherein as the adsorber, the first base has a third groove provided in the first surface, and the third groove is evacuated to hold the substrate on the first region. ### Claim 3 (depends on 2) The ceramic heater according to claim 2, further comprising: a heating element provided in the first base; and an embedded electrode provided between the mounting surface of the first base and the heating element. ### Claim 4 (depends on 1) The ceramic heater according to claim 1, wherein as the adsorber, the first base has an annular protrusion, a bottom surface surrounded by the annular protrusion and a plurality of embosses provided on the bottom surface in the first region, the annular protrusion and the plurality of embosses supporting the substrate, and a space formed by the substrate, the annular protrusion and the bottom surface is evacuated to hold the substrate on the first region. ### Claim 5 (depends on 4) The ceramic heater according to claim 4, further comprising: a heating element provided in the first base; and an embedded electrode provided between the mounting surface of the first base and the heating element. ### Claim 6 (depends on 1) The ceramic heater according to claim 1, wherein as the adsorber, an electrode is embedded in the first base, and the electrode generates an electrostatic adsorption force at least on the first surface of the first region to hold the substrate on the first region. ### Claim 7 (depends on 6) The ceramic heater according to claim 6, further comprising a heating element provided in the first base, wherein the electrode is provided between the mounting surface of the first base and the heating element. ### Claim 8 (depends on 1) The ceramic heater according to claim 1, wherein when the substrate has a diameter of 300 mm, the first groove has a width ranging between 0.5 mm and 4 mm, the first groove has a depth ranging between 0.025 mm and 0.25 mm, a distance between the first surface of the first region and the second surface of the second region ranges between 0.01 mm and 1 mm, each of the plurality of holes has a diameter ranging between 0.25 mm and 2 mm, a diameter of a circle connecting the respective centers of the plurality of holes to each other ranges between 280 mm and 299 mm, and the number of the holes is 8 to 48. ### Claim 9 (depends on 8) The ceramic heater according to claim 8, further comprising: a heating element provided in the first base; and an embedded electrode provided between the mounting surface of the first base and the heating element. ### Claim 10 (depends on 1) The ceramic heater according to claim 1, further comprising: a heating element provided in the first base; and an embedded electrode provided between the mounting surface of the first base and the heating element.