# US 8,540,818 B2 · Polycrystalline silicon reactor

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- Number: US 8,540,818 B2
- Document ID: US8540818B2
- Status: Granted
- Kind: B2
- Application number: 12/662,597
- Filed: 2010-04-26
- Published: 2010-10-28
- Granted: 2013-09-24
- Earliest claimed: 2009-04-28
- Assignees: Mitsubishi Materials Corporation
- Applicants: Seiichi Kirii; Teruhisa Kitagawa
- Inventors: Seiichi Kirii; Teruhisa Kitagawa
- Web page: https://patentgrep.com/patent/US8540818B2

## CPC

- C23C 16/24: Deposition of silicon only
- C01B 33/035: by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)
- C01B: NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; {METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C}

## Abstract

A polycrystalline silicon reactor in which the polycrystalline silicon is deposited by supplying raw-material gas to a heated silicon seed rod has; a bottom plate on which the silicon seed rod stands, having a dished upper surface; an opening of a path penetrating the bottom plate from the upper surface to a lower surface, being provided at a lowest part of the upper surface; and a plug which is detachably attached to the opening.

## Claims

### Claim 1

A polycrystalline silicon reactor in which the polycrystalline silicon is deposited by supplying raw-material gas to a heated silicon seed rod comprising:
a bottom plate on which the silicon seed rod stands, having a dished upper surface formed in a recessed shape so as to descend toward a center thereof;
an opening of a path penetrating the bottom plate from the upper surface to a lower surface, being provided at a lowest part of the upper surface; and
a plug which is detachably attached to the opening.

### Claim 2 (depends on 1)

The polycrystalline silicon reactor according to claim 1, wherein
the plug has a protruded portion which protrudes from the upper surface of the bottom plate, and a through hole which opens at an upper surface of the protruded portion and connects the path to an inner of the reactor.

### Claim 3 (depends on 2)

The polycrystalline silicon reactor according to claim 2, wherein
a sloped annular portion which is higher than the upper surface of the bottom plate is provided at an outer peripheral part of the bottom plate along a circumferential direction, and
the plug is formed so that the upper surface of the protruded portion is higher at least than a top end of the sloped annular portion in a state in which the plug is attached to the opening.

### Claim 4 (depends on 1)

The polycrystalline silicon reactor according to claim 1, wherein the plug is made of carbon.

### Claim 5 (depends on 2)

The polycrystalline silicon reactor according to claim 2, wherein the path is connected to a raw-material gas supply source which supplies the raw-material gas.

### Claim 6 (depends on 1)

The polycrystalline silicon reactor according to claim 1, wherein a sloped annular portion which is higher than the upper surface of the bottom plate is provided at an outer peripheral part of the bottom plate along a circumferential direction.

### Claim 7 (depends on 1)

The polycrystalline silicon reactor according to claim 1, further comprising a cylindrical coolant path surrounding an outer peripheral of the path.