# US 8,540,817 B2 · Method of manufacturing a Si(1-v-w-x)CwAlxNv substrate, method of manufacturing an epitaxial wafer, Si(1-v-w-x)CwAlxNv substrate, and epitaxial wafer > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 8,540,817 B2 - Document ID: US8540817B2 - Status: Granted - Kind: B2 - Application number: 12/989,015 - Filed: 2009-04-17 - Published: 2011-02-17 - Granted: 2013-09-24 - Earliest claimed: 2008-04-24 - Assignees: Sumitomo Electric Industries, Ltd. - Applicants: Issei Satoh; Michimasa Miyanaga; Shinsuke Fujiwara; Hideaki Nakahata - Inventors: Issei Satoh; Michimasa Miyanaga; Shinsuke Fujiwara; Hideaki Nakahata - Web page: https://patentgrep.com/patent/US8540817B2 ## CPC - C30B 23/00: Single-crystal growth by condensing evaporated or sublimed materials - C23C 14/0617: {AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi} - C23C 14/28: by wave energy or particle radiation (C23C14/32 - C23C14/48 take precedence) - C30B 25/02: Epitaxial-layer growth - C30B 29/36: Carbides - C30B 29/38: Nitrides - C30B 29/403: {AIII-nitrides} - H10P 14/20: of semiconductor materials - H10P 14/2905: {Silicon, silicon germanium or germanium} - H10P 14/3202: {Materials thereof} - H10P 14/3208: {Silicon carbide} - H10P 14/3216: {Nitrides} - H10P 14/3238: {being insulating materials} - H10P 14/3252: {Alternating layers, e.g. superlattice} - H10P 14/3256: {Microstructure} - H10P 14/3416: {Nitrides} - C30B 25/00: Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth - C30B 28/12: directly from the gas state - C30B 28/14: by chemical reaction of reactive gases - Y10T 428/24471: Crackled, crazed or slit - C30B: SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds, B01J3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C22B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B22D; working of plastics B29; modifying the physical structure of metals or alloys C21D, C22F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H10); APPARATUS THEREFOR - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - Y10T: TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION ## Abstract There are provided a method for manufacturing a Si(1-v-w-x)CwAlxNv substrate having a reduced number of cracks and high processability, a method for manufacturing an epitaxial wafer, a Si(1-v-w-x)CwAlxNv substrate, and an epitaxial wafer. A method for manufacturing a Si(1-v-w-x)CwAlxNv substrate 10a includes the following steps. First, a Si substrate 11 is prepared. A Si(1-v-w-x)CwAlxNv layer (0