# US 8,540,541 B2 · Light emitting device and method of manufacturing the same > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 8,540,541 B2 - Document ID: US8540541B2 - Status: Granted - Kind: B2 - Application number: 12/703,876 - Filed: 2010-02-11 - Published: 2010-09-02 - Granted: 2013-09-24 - Earliest claimed: 2002-06-27 - Assignees: Semiconductor Energy Laboratory Co., Ltd. - Applicants: Shunpei Yamazaki; Takeshi Noda - Inventors: Shunpei Yamazaki; Takeshi Noda - Web page: https://patentgrep.com/patent/US8540541B2 ## CPC - H10K 59/122: Pixel-defining structures or layers, e.g. banks - H10K 59/8792: {comprising light absorbing layers, e.g. black layers} - H10K 71/135: {using ink-jet printing} - H10K 59/126: Shielding, e.g. light-blocking means over the TFTs - H10K 59/80522: {combined with auxiliary electrodes} - H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES ## Abstract In a top emission structure, there has been a problem in that a wiring, a TFT, or the like is provided in regions other than a light emitting region so that light reflected by the wiring reaches eyes of an observer. The present invention prevents light that is reflected by a wire from reaching eyes of an observer by providing a light-absorbing multilayer film (61) in regions other than a light emitting region. Specifically, the light-absorbing multilayer film (61) is used as an upper layer of a partition wall (also called as a bank or a barrier) that covers ends of a first electrode (66b) whereas an organic resin film (67) is used as a lower layer of the partition wall. The partition wall in the present invention is characterized by being a laminate of three or more layers formed of different materials. ## Claims ### Claim 1 A method of manufacturing a light emitting device comprising: forming a laminate of an insulating film and a light-absorbing multilayer film on a first electrode; etching the laminate so as to form a partition wall; forming an organic compound-containing film over the first electrode and the partition wall; and forming a second electrode over the organic compound-containing film, wherein the second electrode transmits light, wherein the partition wall comprises the etched insulating film and the etched light-absorbing multilayer film over the etched insulating film, wherein the etched insulating film covers an end portion of the first electrode, and wherein the light-absorbing multilayer film comprises a reflective metal film, a first transparent film comprising nitride, a light-absorbing film comprising nitride, and a second transparent film comprising nitride. ### Claim 2 (depends on 1) The method of manufacturing a light emitting device according to claim 1, wherein the insulating film is an inorganic insulating film or an organic resin film. ### Claim 3 (depends on 1) The method of manufacturing a light emitting device according to claim 1, wherein the first electrode is an anode and comprises a metal layer that is larger in work function than the second electrode. ### Claim 4 (depends on 1) The method of manufacturing a light emitting device according to claim 1, wherein each of the first transparent film and the second transparent film comprises a material selected from the group consisting of Al2O3, SiO2, ZrO2, HfO2, Sc2O3, TiO2, ITO and ZnO. ### Claim 5 (depends on 1) The method of manufacturing a light emitting device according to claim 1, wherein at least one of the reflective metal film and the light-absorbing film includes nitrogen. ### Claim 6 (depends on 1) The method of manufacturing a light emitting device according to claim 1, wherein the reflective metal film is formed of a material selected from the group consisting of Ti, Al, Cu, Au, Mo, Ni, Pt, Rh, Ag, W, Cr, Co, Si, Zr, Ta, Inconel and Nichrome. ### Claim 7 (depends on 1) The method of manufacturing a light emitting device according to claim 1, wherein the organic compound-containing film is formed by an ink-jet. ### Claim 8 (depends on 1) The method of manufacturing a light emitting device according to claim 1, wherein the organic compound-containing film is formed by an ink-jet under reduced pressure. ### Claim 9 (depends on 1) The method of manufacturing a light emitting device according to claim 1, wherein the organic compound-containing film includes an organic compound configured to emit white light. ### Claim 10 A method of manufacturing a light emitting device comprising: forming an insulating film on a first electrode, forming a reflective metal film over the insulating film, a first transparent film over the reflective metal film, and a light-absorbing film over the first transparent film so as to form a light-absorbing multilayer film, thereby forming a laminate of the insulating film and the light-absorbing multilayer film; etching the laminate so as to form a partition wall; forming an organic compound-containing film over the first electrode and the partition wall; and forming a second electrode over the organic compound-containing film, wherein the second electrode transmits light, wherein the partition wall comprises the etched insulating film and the etched light-absorbing multilayer film over the etched insulating film, wherein the etched insulating film covers an end portion of the first electrode, and wherein the light-absorbing multilayer film comprises a second transparent film. ### Claim 11 (depends on 10) The method of manufacturing a light emitting device according to claim 10, wherein the insulating film is an inorganic insulating film or an organic resin film. ### Claim 12 (depends on 10) The method of manufacturing a light emitting device according to claim 10, wherein the first electrode is an anode and comprises a metal layer that is larger in work function than the second electrode. ### Claim 13 (depends on 10) The method of manufacturing a light emitting device according to claim 10, wherein each of the first transparent film and the second transparent film comprises a material selected from the group consisting of Al2O3, SiO2, ZrO2, HfO2, Sc2O3, TiO2, ITO and ZnO. ### Claim 14 (depends on 10) The method of manufacturing a light emitting device according to claim 10, wherein at least one of the reflective metal film and the light-absorbing film includes nitrogen. ### Claim 15 (depends on 10) The method of manufacturing a light emitting device according to claim 10, wherein the reflective metal film is formed of a material selected from the group consisting of Ti, Al, Cu, Au, Mo, Ni, Pt, Rh, Ag, W, Cr, Co, Si, Zr, Ta, Inconel and Nichrome. ### Claim 16 (depends on 10) The method of manufacturing a light emitting device according to claim 10, wherein the organic compound-containing film is formed by an ink-jet. ### Claim 17 (depends on 10) The method of manufacturing a light emitting device according to claim 10, wherein the organic compound-containing film is formed by an ink-jet under reduced pressure. ### Claim 18 (depends on 10) The method of manufacturing a light emitting device according to claim 10, wherein the organic compound-containing film includes an organic compound configured to emit white light. ### Claim 19 A method of manufacturing a light emitting device comprising: forming a laminate of an insulating film and a light-absorbing multilayer film on a first electrode; etching the laminate so as to form a partition wall; forming an organic compound-containing film over the first electrode and the partition wall; forming a second electrode over the organic compound-containing film; and forming a wiring over the partition wall and the second electrode, wherein the second electrode transmits light, wherein the partition wall comprises the etched insulating film and the etched light-absorbing multilayer film over the etched insulating film, wherein the etched insulating film covers an end portion of the first electrode, and wherein the light-absorbing multilayer film comprises a reflective metal film, a first transparent film comprising nitride, a light-absorbing film comprising nitride, and a second transparent film comprising nitride. ### Claim 20 (depends on 19) The method of manufacturing a light emitting device according to claim 19, wherein the insulating film is an inorganic insulating film or an organic resin film. ### Claim 21 (depends on 19) The method of manufacturing a light emitting device according to claim 19, wherein the first electrode is an anode and comprises a metal layer that is larger in work function than the second electrode. ### Claim 22 (depends on 19) The method of manufacturing a light emitting device according to claim 19, wherein each of the first transparent film and the second transparent film comprises a material selected from the group consisting of Al2O3, SiO2, ZrO2, HfO2, Sc2O3, TiO2, ITO and ZnO. ### Claim 23 (depends on 19) The method of manufacturing a light emitting device according to claim 19, wherein at least one of the reflective metal film and the light-absorbing film includes nitrogen. ### Claim 24 (depends on 19) The method of manufacturing a light emitting device according to claim 19, wherein the reflective metal film is formed of a material selected from the group consisting of Ti, Al, Cu, Au, Mo, Ni, Pt, Rh, Ag, W, Cr, Co, Si, Zr, Ta, Inconel and Nichrome. ### Claim 25 (depends on 19) The method of manufacturing a light emitting device according to claim 19, wherein the organic compound-containing film is formed by an ink-jet. ### Claim 26 (depends on 19) The method of manufacturing a light emitting device according to claim 19, wherein the organic compound-containing film is formed by an ink-jet under reduced pressure. ### Claim 27 (depends on 19) The method of manufacturing a light emitting device according to claim 19, wherein the organic compound-containing film includes an organic compound configured to emit white light.