# US 8,540,161 B2 · Semiconductor device and method for manufacturing the same > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 8,540,161 B2 - Document ID: US8540161B2 - Status: Granted - Kind: B2 - Application number: 13/187,777 - Filed: 2011-07-21 - Published: 2012-02-02 - Granted: 2013-09-24 - Earliest claimed: 2010-07-29 - Assignees: Semiconductor Energy Laboratory Co., Ltd. - Applicants: Yutaka Shionoiri; Tatsuji Nishijima; Misako Sato; Shuhei Maeda - Inventors: Yutaka Shionoiri; Tatsuji Nishijima; Misako Sato; Shuhei Maeda - Web page: https://patentgrep.com/patent/US8540161B2 ## CPC - H10D 86/80: characterised by multiple passive components, e.g. resistors, capacitors or inductors - G06K 19/07783: {the coil being planar} - H10W 44/501: {Inductive arrangements (H10W44/20 takes precedence)} - H10D 86/423: {comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO} - H10D 86/60: wherein the TFTs are in active matrices - H10W 44/248: {for antennas} - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - G06K: GRAPHICAL DATA READING (image or video recognition or understanding G06V); PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract An object of this invention is to provide a semiconductor device (an RFID) with reduced loss of voltage/current corresponding to a threshold value of a transistor, and having a voltage/current rectification property. Another object of this invention is to simplify a fabrication process and a circuit configuration. A rectifier circuit is provided in an element included in a semiconductor device (RFID) capable of communicating data wirelessly. As compared to the case where only a diode is provided, coils are provided between gate terminals and drain terminals of transistors constituting the diode in a rectifier circuit, so that the coils overlap an antenna which receives a radio wave, whereby a voltage output by the rectifier circuit is increased using electromagnetic coupling between the antenna which receives a radio wave and the coils, so that the rectification efficiency is improved. ## Claims ### Claim 1 A semiconductor device comprising: an antenna including a first terminal and a second terminal; and a rectifier circuit comprising: a first transistor including a first gate electrode, a first source electrode, and a first drain electrode, the first drain electrode being electrically connected to the first terminal of the antenna; a second transistor including a second gate electrode, a second source electrode, and a second drain electrode, the second drain electrode and the second source electrode being electrically connected to the second terminal of the antenna and to the first drain electrode of the first transistor, respectively; a first coil at least partially overlapping the antenna and electrically connected between the first gate electrode and the first drain electrode of the first transistor; and a second coil electrically connected between the second gate electrode and the second drain electrode of the second transistor. ### Claim 2 (depends on 1) A semiconductor device according to claim 1, wherein the second coil at least partly overlaps with the antenna. ### Claim 3 (depends on 1) A semiconductor device according to claim 1, wherein the first coil has a stacked-layer structure and comprises at least one element selected among aluminum, chromium, tantalum, titanium, molybdenum, tungsten, silver, copper, gold, platinum, nickel and palladium. ### Claim 4 (depends on 1) A semiconductor device according to claim 1, wherein the first transistor comprises an oxide semiconductor. ### Claim 5 (depends on 1) A semiconductor device according to claim 1, wherein the first transistor and the second transistor comprise an oxide semiconductor. ### Claim 6 (depends on 1) An RF tag including the semiconductor device according to claim 1. ### Claim 7 (depends on 1) A semiconductor device according to claim 1, wherein the second coil at least partly overlaps with the first coil. ### Claim 8 A semiconductor device comprising: a coil antenna including a first terminal and a second terminal; and a rectifier circuit comprising: a first transistor including a first gate electrode, a first source electrode, and a first drain electrode; a second transistor including a second gate electrode, a second source electrode, and a second drain electrode, the second drain electrode and the second source electrode being electrically connected to the second terminal of the coil antenna and to the first drain electrode of the first transistor, respectively; a first coil electrically connected between the first gate electrode and the first drain electrode of the first transistor; a second coil electrically connected between the second gate electrode and the second drain electrode of the second transistor; a first capacitor including a third terminal and a fourth terminal, the third terminal and the fourth terminal being electrically connected to the first terminal of the coil antenna and to the first drain electrode of the first transistor, respectively; and a second capacitor including a fifth terminal and a sixth terminal; the fifth terminal and the sixth terminal being electrically connected to the first source electrode of the first transistor and to the second drain electrode of the second transistor, respectively. ### Claim 9 (depends on 8) A semiconductor device according to claim 8, wherein the first coil and the second coil at least partly overlap with the coil antenna. ### Claim 10 (depends on 8) A semiconductor device according to claim 8, wherein the first coil and the second coil have a stacked-layer structure and comprise at least one element selected among aluminum, chromium, tantalum, titanium, molybdenum, tungsten, silver, copper, gold, platinum, nickel and palladium. ### Claim 11 (depends on 8) A semiconductor device according to claim 8, wherein the first transistor and the second transistor comprise an oxide semiconductor. ### Claim 12 (depends on 8) An RF tag including the semiconductor device according to claim 8. ### Claim 13 (depends on 8) A semiconductor device according to claim 8, wherein the second coil at least partly overlaps with the first coil. ### Claim 14 A semiconductor device comprising: an antenna including a first terminal and a second terminal; and a rectifier circuit comprising: a first transistor including a first gate electrode, a first source electrode, and a first drain electrode; the first drain electrode being electrically connected to the first terminal of the antenna; a second transistor including a second gate electrode, a second source electrode, and a second drain electrode, the second drain electrode and the second source electrode being electrically connected to the second terminal of the antenna and to the first drain electrode of the first transistor, respectively; a first coil electrically connected between the first gate electrode and the first drain electrode of the first transistor; and a second coil electrically connected between the second gate electrode and the second drain electrode of the second transistor; a demodulation circuit electrically connected to the antenna; a modulation circuit electrically connected to the antenna; a constant voltage circuit electrically connected to the rectifier circuit; a clock generation circuit electrically connected to the constant voltage circuit; and a logic circuit electrically connected to the constant voltage circuit, to the clock generation circuit, to the demodulation circuit and to the modulation circuit. ### Claim 15 (depends on 14) A semiconductor device according to claim 14, wherein the first coil and the second coil at least partly overlap with the antenna. ### Claim 16 (depends on 14) A semiconductor device according to claim 14, wherein the first coil and the second coil have a stacked-layer structure and comprise at least one element selected among aluminum, chromium, tantalum, titanium, molybdenum, tungsten, silver, copper, gold, platinum, nickel and palladium. ### Claim 17 (depends on 14) A semiconductor device according to claim 14, wherein the first transistor and the second transistor comprise an oxide semiconductor. ### Claim 18 (depends on 14) An RF tag including the semiconductor device according to claim 14. ### Claim 19 (depends on 14) A semiconductor device according to claim 14, wherein the second coil at least partly overlap overlaps with the first coil. ### Claim 20 A method for manufacturing a semiconductor device comprising the steps of: forming on a substrate a transistor including a semiconductor layer, a gate insulating layer, a gate electrode, a source electrode, and a drain electrode; forming a first insulating layer over the transistor; forming a source electrode layer, a drain electrode layer and connection electrode layers over the first insulating layer, the source electrode layer and the drain electrode layer being in electrical contact with the source electrode and the drain electrode of the transistor, respectively; forming a second insulating layer over the source electrode layer, the drain electrode layer, the connection electrode layers and the first insulating layer; forming a coil over the second insulating layer, the coil being in electrical contact with one of the connection electrode layers; forming a third insulating layer over the coil and the second insulating layer; and forming an antenna over the third insulating layer. ### Claim 21 (depends on 20) The method for manufacturing a semiconductor device according to claim 20, wherein the coil includes a conductive layer containing an element selected from aluminum, chromium, tantalum, titanium, molybdenum, tungsten, silver, copper, gold, platinum, nickel and palladium. ### Claim 22 (depends on 20) The method for manufacturing a semiconductor device according to claim 20, wherein any of the first insulating layer, the second insulating layer and the third insulating layer includes an organic layer. ### Claim 23 (depends on 20) The method for manufacturing a semiconductor device according to claim 20, further comprising the step of forming a first inorganic insulating layer over the antenna, wherein the second insulating layer includes a second inorganic insulating layer; and wherein the first inorganic insulating layer and the second inorganic insulating layer are in direct contact outside of an antenna portion of the semiconductor device. ### Claim 24 (depends on 20) The method for manufacturing a semiconductor device according to claim 20, wherein the semiconductor layer is an oxide semiconductor layer. ### Claim 25 (depends on 20) The method for manufacturing a semiconductor device according to claim 20, wherein the antenna is formed by depositing and patterning a conductive layer over the third insulating layer. ### Claim 26 A method for manufacturing a semiconductor device comprising the steps of: forming on a substrate a transistor including a semiconductor layer, a gate insulating layer, a gate electrode, a source electrode, and a drain electrode; forming a first insulating layer over the transistor; forming a source electrode layer, a drain electrode layer and connection electrode layers over the first insulating layer, the source electrode layer and the drain electrode layer being in electrical contact with the source electrode and the drain electrode of the transistor, respectively; forming a second insulating layer over the source electrode layer, the drain electrode layer, the connection electrode layers and the first insulating layer; forming a first coil over the second insulating layer, the first coil being in electrical contact with one of the connection electrode layers; forming a third insulating layer over the first coil, forming a second coil over the third insulating layer; forming a fourth insulating layer over the second coil and the third insulating layer; and forming an antenna over the fourth insulating layer. ### Claim 27 (depends on 26) The method for manufacturing a semiconductor device according to claim 26, wherein the first coil and the second coil each include a conductive layer containing an element selected from aluminum, chromium, tantalum, titanium, molybdenum, tungsten, silver, copper, gold, platinum, nickel and palladium. ### Claim 28 (depends on 26) The method for manufacturing a semiconductor device according to claim 26, wherein any of the first insulating layer, the second insulating layer, the third insulating layer and the fourth insulating layer includes an organic material. ### Claim 29 (depends on 26) The method for manufacturing a semiconductor device according to claim 26, further comprising the step of forming a first inorganic insulating layer over the antenna, wherein the second insulating layer includes a second inorganic insulating layer; and wherein the first inorganic insulating layer and the second inorganic insulating layer are in direct contact outside of an antenna portion of the semiconductor device. ### Claim 30 (depends on 26) The method for manufacturing a semiconductor device according to claim 26, wherein the semiconductor layer is an oxide semiconductor layer. ### Claim 31 (depends on 26) The method for manufacturing a semiconductor device according to claim 26, wherein the antenna is formed by depositing and patterning a conductive layer over the fourth insulating layer.