# US 8,539,908 B2 · Film forming apparatus, film forming method and storage medium

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- Number: US 8,539,908 B2
- Document ID: US8539908B2
- Status: Granted
- Kind: B2
- Application number: 12/593,502
- Filed: 2008-03-13
- Published: 2010-05-13
- Granted: 2013-09-24
- Earliest claimed: 2007-03-27
- Assignees: Tokyo Electron Limited
- Applicants: Toshio Takagi
- Inventors: Toshio Takagi
- Web page: https://patentgrep.com/patent/US8539908B2

## CPC

- C23C 16/45565: {Shower nozzles}
- C23C 16/45521: {the gas, other than thermal contact gas, being introduced the rear of the substrate to flow around its periphery}
- C23C 16/45574: {Nozzles for more than one gas}
- C23C 16/4586: {Elements in the interior of the support, e.g. electrodes, heating or cooling devices}
- H10P 14/6339: {deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD}
- H10P 14/69395: {the material containing zirconium, e.g. ZrO2}
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

A film forming apparatus includes a processing chamber, and a mounting table disposed in the processing chamber to mount a substrate thereon. The film forming apparatus further includes a gas shower head having gas supply holes and including a central region facing a central portion of the substrate and a peripheral region facing a peripheral portion of the substrate, a first processing gas supply unit for supplying a first processing gas to the central region, a second processing gas supply unit for supplying a second processing gas to the central region, an energy supply unit for supplying energy to react the first processing gas with the second processing gas on the substrate, and a purge gas supply unit for supplying a purge gas to the central region and the peripheral region when one of the first and the second processing gas is switched by the other.

## Claims

### Claim 1

A film forming apparatus comprising:
a processing chamber;
a mounting table disposed in the processing chamber to mount a substrate thereon;
a gas shower head facing the substrate mounted on the mounting table, having gas supply holes, and including a central region facing a central portion of the substrate and a peripheral region facing a peripheral portion of the substrate;
a first processing gas supply unit including a first processing gas supply line which is configured to supply a first processing gas only to the central region of the gas shower head;
a second processing gas supply unit including a second processing gas supply line to supply a second processing gas to the central region of the gas shower head;
an energy supply unit for supplying energy to the substrate;
a purge gas supply unit for supplying a purge gas to the central region and the peripheral region of the gas shower head; and
a control unit configured to control the first and the second processing gas supply unit, the energy supply unit, and the purge gas supply unit to perform operations including:
supplying the first processing gas only to the central region of the gas shower head through the first processing gas supply line so that the first processing gas is adsorbed on the substrate;
stopping said supplying the first processing gas and then supplying the purge gas to the central region and the peripheral region of the gas shower head;
stopping supplying the purge gas to the central region of the gas shower head and then supplying the second processing gas to the central region of the gas shower head; and
supplying the energy to the substrate so that the first processing gas adsorbed on the substrate reacts with the second processing gas,
wherein the control unit is configured such that the film forming apparatus performs, by the operations, an atomic layer deposition on the substrate, and
wherein an area of the central region of the gas shower head is 50% or less of an area of the peripheral region of the gas shower head.

### Claim 2 (depends on 1)

The apparatus of claim 1, wherein the first processing gas supply line is independent of the second processing gas supply line.

### Claim 3 (depends on 1)

The apparatus of claim 1, wherein the first processing gas supply line and the second processing gas supply line share, at least partially, a common passage.

### Claim 4 (depends on 1)

The apparatus of claim 1, wherein the energy supply unit includes a heater to heat the substrate mounted on the mounting table.

### Claim 5 (depends on 1)

The apparatus of claim 1, wherein the first processing gas includes a film forming gas to form a film made of a compound containing at least one selected from a group consisting of Zr, Hf, Si, Sr, Ti, Y and La, and the second processing gas includes an oxidizing gas for oxidizing the compound to obtain a high-k dielectric material.

### Claim 6 (depends on 1)

The apparatus of claim 1, wherein the control unit is configured to control the purge gas supply unit to supply the purge gas to the peripheral region of the gas shower head when said supplying the first process gas is performed.

### Claim 7 (depends on 1)

The apparatus of claim 1, wherein the first processing gas supply line and the second processing gas supply line extend to the central region of the gas shower head, and
wherein the first processing gas supply line and the second processing gas supply line are independent of each other.

### Claim 8 (depends on 1)

The apparatus of claim 1, further comprising:
a gas supply unit disposed below the mounting table for supplying a gas to a space below the mounting table.

### Claim 9 (depends on 1)

The apparatus of claim 1, wherein the control unit is configured to control the second processing gas supply unit such that the second processing gas is supplied only through the peripheral region of the gas shower head.