Atomic layer deposition of photoresist materials and hard mask precursors
AssigneeApplied Materials, Inc.
InventorsTimothy W. Weidman, Timothy Michaelson, Paul Deaton
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Abstract
Methods for forming photoresists sensitive to radiation on substrate are provided. Atomic layer deposition methods of forming films (e.g., silicon-containing films) photoresists are described. The process can be repeated multiple times to deposit a plurality of silicon photoresist layers. Process of depositing photoresist and forming patterns in photoresist are also disclosed which utilize carbon containing underlayers such as amorphous carbon layers.
Claims34
A method for forming a radiation sensitive photoresist on a substrate comprising:
- exposing a substrate sequentially to alternating pulses of a first precursor containing substituents with cross-linkable moieties and a reactant selected from ozone, H2O, H2O2, NH3, reactive oxygen, reactive nitrogen, and reactive hydrogen and a second precursor containing reactive, moieties cross-linkable with the substituents in the first precursor to form a deposited layer such that reactive, cross-linkable moieties present in the first precursor and second precursor in the deposited layer remain partially unreacted and soluble to developer solution;
- and
- selectively exposing portions of the deposited layer to radiation selected from EUV, far UV, X-ray and e-beam to create a pattern in which exposed portions of the deposited layer contain cross-linked moieties that form a film on the substrate that is less soluble than unexposed portions of the deposited layer.
A method for forming a patterned photoresist on a substrate comprising:
- exposing a substrate sequentially to alternating pulses of a Si—H containing precursor and a silicon-containing precursor containing cross-linkable moieties by atomic layer deposition to form a deposited layer on the substrate;
- and
- selectively exposing portions of the layer to radiation selected from EUV, far UV, X-ray and e-beam to form a pattern in which exposed portions of the deposited layer is more cross-linked than unexposed portions of the deposited layer on the substrate.
A method of forming a patterned photoresist on a substrate comprising:
- forming a carbon-containing film on the substrate;
- forming surface layer in the carbon-containing film that is sensitive to radiation;
- exposing a portion of the carbon-containing film to radiation selected from EUV, far UV, X-ray and e-beam to provide an exposed surface portion;
- and
- selectively depositing by atomic layer deposition a metal-containing film only on the exposed regions of the carbon-containing film.
Dependencies are inferred from the claim text.