Data storage in analog memory cell arrays having erase failures
AssigneeApple Inc.
InventorsOfir Shalvi, Shai Winter, Naftali Sommer, Dotan Sokolov
Life of this patent
Estimating the term…
Abstract
A method for data storage includes performing an erasure operation on a group of analog memory cells (32). One or more of the memory cells in the group, which failed the erasure operation, are identified as erase-failed cells. A storage configuration that is used for programming the analog memory cells in the group is modified responsively to the identified erase-failed cells. Data is stored in the group of the analog memory cells using the modified storage configuration.
Claims38
A method for data storage, comprising:
- performing an erasure operation on a group of analog memory cells;
- identifying as erase-failed cells one or more of the memory cells in the group that failed the erasure operation;
- modifying, responsively to the identified erase-failed cells, a storage configuration that is used for programming the analog memory cells in the group;
- and
- storing data within the group of the analog memory cells containing the identified erase-failed cells using the modified storage configuration.
An apparatus for data storage, comprising:
- an interface, which is operative to communicate with a memory device that includes a plurality of analog memory cells;
- and
- circuitry, which is coupled to perform an erasure operation on a group of the analog memory cells, to identify as erase-failed cells one or more of the memory cells in the group that failed the erasure operation, to modify, responsively to the identified erase-failed cells, a storage configuration that is used for programming the analog memory cells in the group, and to store data within the group of the analog memory cells containing the identified erase-failed cells using the modified storage configuration.
Apparatus for data storage, comprising:
- a memory device, which comprises a plurality of analog memory cells;
- and
- a processor, which is coupled to perform an erasure operation on a group of the analog memory cells, to identify as erase-failed cells one or more of the memory cells in the group that failed the erasure operation, to modify, responsively to the identified erase-failed cells, a storage configuration that is used for programming the analog memory cells, and to store data within the group of the analog memory cells containing the identified erase-failed cells using the modified storage configuration.
A memory device, comprising:
- a plurality of analog memory cells;
- and
- Read/Write (R/W) circuitry, which is coupled to perform an erasure operation on a group of the analog memory cells, to identify as erase-failed one or more of the memory cells in the group that failed the erasure operation, and to report information regarding the identified erase-failed cells to a controller external to the memory device, so as to enable the controller to store data within the group of the analog memory cells containing the identified erase-failed cells.
Dependencies are inferred from the claim text.