US 8,526,477 B2 · Semiconductor light emitting device

Abstract

A semiconductor light emitting device of one embodiment includes: a substrate; an n-type layer of an n-type nitride semiconductor on the substrate; an active layer of a nitride semiconductor on the n-type semiconductor layer; a p-type layer of a p-type nitride semiconductor on the active layer. The p-type layer has a ridge stripe shape. The device has an end-face layer of a nitride semiconductor formed on an end face of the n-type semiconductor layer, the active layer, and the p-type semiconductor layer. The end face is perpendicular to an extension direction of the ridge stripe shape. The end-face layer has band gap wider than the active layer. The end-face layer has Mg concentration in the range of 5E16 atoms/cm3 to 5E17 atoms/cm3 at a region adjacent to the p-type layer.

Claims8

Dependent claims

A semiconductor laser diode comprising:

a substrate;
an n-type layer of an n-type nitride semiconductor on the substrate;
an active layer of a nitride semiconductor on the n-type layer;
a p-type layer of a p-type nitride semiconductor on the active layer, the p-type layer having a ridge stripe shape;
and
an end-face layer of a nitride semiconductor formed on an end face of the n-type layer, the active layer, and the p-type layer, the end face being perpendicular to an extension direction of the ridge stripe shape, the end-face layer having a band gap wider than the active layer, the end-face layer having Mg (Magnesium) concentration in the range of 5×1016 atoms/cm3 to 5×1017 atoms/cm3 at a region adjacent to the p-type layer,
wherein a thickness of the end-face layer in the extension direction of the ridge stripe shape is 10 μm or larger.

4 more elements

Dependencies are inferred from the claim text.

Semiconductor light emitting device

Life of this patent

Semiconductor light emitting device

Life of this patent

Abstract

Claims8