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US 8,526,476 B2Granted
Semiconductor chip and method for manufacturing a semiconductor chip
AssigneeOSRAM Opto Semiconductors GmbH
InventorsKarl Engl, Lutz Hoeppel, Christoph Eichler, Matthias Sabathil, Andreas Weimar
Life of this patent
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Abstract
A semiconductor chip with a semiconductor body has a semiconductor layer sequence with an active region provided for generating radiation. A mirror structure that includes a mirror layer and a dielectric layer that is arranged at least in regions between the mirror layer and semiconductor body is arranged on the semiconductor body.
Claims17
A semiconductor chip comprising:
- a semiconductor body comprising a semiconductor layer sequence with an active region provided for generating radiation;
- a mirror structure arranged on the semiconductor body, the mirror structure comprising a mirror layer and a dielectric layer structure arranged at least in regions between the mirror layer and the semiconductor body, wherein the dielectric layer structure has at least one cutout;
- and
- a contact structure arranged in the at least one cutout of the dielectric layer structure, wherein the contact structure comprises a reflector layer that contains a metal or a metallic alloy and is arranged closer to the semiconductor body than the mirror layer, and wherein the contact structure comprises a layer containing a transparent conductive oxide material, said layer containing transparent conductive oxide material being arranged in the at least one cutout between the semiconductor body and the reflector layer, wherein the transparent oxide material and the reflector layer are arranged only in the at least one cutout.
1 more element
A method for manufacturing a semiconductor chip the method comprising:
- providing a semiconductor layer structure system with an active region provided for generating radiation;
- forming a mirror structure over the semiconductor layer structure system, wherein the mirror structure comprises a dielectric layer structure and a mirror layer, wherein the dielectric layer structure has a at least one cutout;
- forming a semiconductor body with a layer sequence from the semiconductor layer structure system;
- and
- forming a contact structure in the at least one cutout of the dielectric layer structure, wherein the contact structure comprises a reflector layer that contains a metal or a metallic alloy and is arranged closer to the semiconductor body than the mirror layer, and wherein the contact structure comprises a layer containing a transparent conductive oxide material, said transparent conductive oxide material-containing layer being arranged in the at least one cutout between the semiconductor body and the reflector layer, wherein the transparent oxide material and the reflector layer are arranged only in the at least one cutout.
2 more elements
Dependencies are inferred from the claim text.