Variable resistance memory device and related method of operation

#Embodiments of the inventive concept relate generally to semiconductor memory devices. More particularly, embodiments of the inventive concept relate to variable resistance memory devices and related methods of operation.

#Semiconductor memory devices can be roughly divided into two categories according to whether they retain stored data when disconnected from power. These categories include volatile memory devices, which lose stored data when disconnected from power, and nonvolatile memory devices, which retain stored data when disconnected from power.

#In recent years, there has been a steady increase in the demand for nonvolatile memory devices capable of high speed operation and high storage capacity. This demand has been addressed to a certain extent by the widespread adoption of flash memory. However, researchers continue to explore additional types of nonvolatile memory devices with the potential for improved performance and data storage capacity. Examples of these additional types of nonvolatile memory devices include ferroelectric random access memory (FRAM), magnetoresistive random access memory (MRAM), phase change random access memory (PRAM), and resistive random access memory (RRAM).

#The drawings illustrate selected embodiments of the inventive concept. In the drawings, like reference numbers indicate like features.

#FIG. 1 is a diagram illustrating a structure of a variable resistance memory cell.

#FIG. 2 is a diagram illustrating a variable resistance memory device according to an embodiment of the inventive concept.

#Embodiments of the inventive concept are described below with reference to the accompanying drawings. These embodiments are presented as teaching examples and should not be construed to limit the scope of the inventive concept.

#FIG. 1 is a diagram illustrating a structure of a variable resistance memory cell.

#Referring to FIG. 1, the variable resistance memory cell comprises a variable resistance device 10 and a select device 20.