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US 8,526,240 B2Granted
Flash memory and memory cell programming method thereof
AssigneeeMemory Technology Inc.
InventorsChun-Yuan Lo, Wein-Town Sun
Life of this patent
Estimating the term…
Abstract
A programming method includes the following steps. A preset programming voltage is applied to a memory cell to program the memory cell. A first verify voltage is applied to the memory cell to detect a programming result of the memory cell. A programming voltage applied on the memory cell is adjusted according to the programming result of the memory cell. A flash memory is also provided.
Claims10
A memory cell programming method of a flash memory, comprising:
- applying a preset programming voltage to a memory cell to program the memory cell;
- applying a first verify voltage to the memory cell to detect a programming result of the memory cell;
- and
- adjusting a programming voltage applied on the memory cell according to the programming result of the memory cell, the step comprising:
- determining whether a threshold voltage of the memory cell is greater than or equal to a second verify voltage;
- adjusting the programming voltage to a first programming voltage when the threshold voltage is greater than or equal to the second verify voltage;
- determining whether the threshold voltage is greater than or equal to a third verify voltage when the threshold voltage is smaller than the second verify voltage;
- adjusting the programming voltage to a second programming voltage when the threshold voltage is greater than or equal to the third verify voltage;
- and
- adjusting the programming voltage to a third programming voltage when the threshold voltage is smaller than the third verify voltage, wherein the first verify voltage is smaller than the second verify voltage and is greater than the third verify voltage, and the second programming voltage is greater than the first programming voltage and is smaller than the third programming voltage.
7 more elements
A memory cell programming method of a flash memory, comprising:
- applying a preset programming voltage to a memory cell to program the memory cell;
- applying a first verify voltage to the memory cell to detect a programming result of the memory cell;
- and
- adjusting a programming voltage applied on the memory cell according to the programming result of the memory cell, the step comprising:
- determining whether a threshold voltage of the memory cell is smaller than or equal to a second verify voltage;
- adjusting the programming voltage to a first programming voltage when the threshold voltage is smaller than or equal to the second verify voltage;
- determining whether the threshold voltage is smaller than or equal to a third verify voltage when the threshold voltage is greater than the second verify voltage;
- adjusting the programming voltage to a second programming voltage when the threshold voltage is smaller than or equal to the third verify voltage;
- and
- adjusting the programming voltage to a third programming voltage when the threshold voltage is greater than the third verify voltage, wherein the first verify voltage is greater than the second verify voltage and is smaller than the third verify voltage, and the second programming voltage is smaller than the first programming voltage and is greater than the third programming voltage.
7 more elements
A memory cell programming method of a flash memory, comprising:
- applying a preset programming voltage to a memory cell to program the memory cell;
- applying a first verify voltage to the memory cell to detect a programming result of the memory cell;
- and
- adjusting a programming voltage applied on the memory cell according to the programming result of the memory cell, the step comprising:
- simultaneously determining whether a threshold voltage of the memory cell is greater than or equal to a second verify voltage and a third verify voltage, wherein the first verify voltage is smaller than the second verify voltage and is greater than the third verify voltage;
- and
- adjusting the programming voltage according to comparison results of the threshold voltage and the second verify voltage and the third verify voltage.
4 more elements
A flash memory, comprising:
- a programming verification unit, coupled to a memory cell, for applying a preset programming voltage to the memory cell to program the memory cell, and applying a first verify voltage to the memory cell to detect a programming result of the memory cell;
- and
- a programming voltage control unit, coupled to the programming verification unit and the memory cell, for adjusting a programming voltage applied on the memory cell according to the programming result of the memory cell, wherein the programming voltage control unit further determines whether a threshold voltage of the memory cell is greater than or equal to a second verify voltage, wherein the programming voltage control unit adjusts the programming voltage to a first programming voltage when the threshold voltage is greater than or equal to the second verify voltage, determines whether the threshold voltage is greater than or equal to a third verify voltage when the threshold voltage is smaller than the second verify voltage, adjusts the programming voltage to a second programming voltage when the threshold voltage is greater than or equal to the third verify voltage, and adjusts the programming voltage to a third programming voltage when the threshold voltage is smaller than the third verify voltage, wherein the first verify voltage is smaller than the second verify voltage and is greater than the third verify voltage, and the second programming voltage is greater than the first programming voltage and is smaller than the third programming voltage.
A flash memory, comprising:
- a programming verification unit, coupled to a memory cell, for applying a preset programming voltage to the memory cell to program the memory cell, and applying a first verify voltage to the memory cell to detect a programming result of the memory cell;
- and
- a programming voltage control unit, coupled to the programming verification unit and the memory cell, for adjusting a programming voltage applied on the memory cell according to the programming result of the memory cell, wherein the programming voltage control unit further determines whether a threshold voltage of the memory cell is smaller than or equal to a second verify voltage, wherein the programming voltage control unit adjusts the programming voltage to a first programming voltage when the threshold voltage is smaller than or equal to the second verify voltage, determines whether the threshold voltage is smaller than or equal to a third verify voltage when the threshold voltage is greater than the second verify voltage, adjusts the programming voltage to a second programming voltage when the threshold voltage is smaller than or equal to the third verify voltage, and adjusts the programming voltage to a third programming voltage when the threshold voltage is greater than the third verify voltage, wherein the first verify voltage is greater than the second verify voltage and is smaller than the third verify voltage, and the second programming voltage is smaller than the first programming voltage and is greater than the third programming voltage.
A flash memory, comprising:
- a programming verification unit, coupled to a memory cell, for applying a preset programming voltage to the memory cell to program the memory cell, and applying a first verify voltage to the memory cell to detect a programming result of the memory cell;
- and
- a programming voltage control unit, coupled to the programming verification unit and the memory cell, for adjusting a programming voltage applied on the memory cell according to the programming result of the memory cell, wherein the programming voltage control unit further simultaneously determines whether a threshold voltage of the memory cell is greater than or equal to a second verify voltage and a third verify voltage, wherein the first verify voltage is smaller than the second verify voltage and is greater than the third verify voltage, and adjusts the programming voltage according to comparison results of the threshold voltage and the second verify voltage and the third verify voltage.
Dependencies are inferred from the claim text.