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US 8,526,232 B2Granted
Nonvolatile memory device using variable resistive element
AssigneeSamsung Electronics Co., Ltd.
InventorsByung-Jun Min, Hoi-Ju Chung
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AssigneeSamsung Electronics Co., Ltd.
InventorsByung-Jun Min, Hoi-Ju Chung
Estimating the term…
A nonvolatile memory device that employs a variable resistive element includes: a memory cell array having a plurality of memory cells; a first circuit block that is disposed at one side of the memory cell array and performs a first operation on the memory cells; a second circuit block that is disposed at the other side of the memory cell array and performs a second operation on the memory cells, wherein the second operation is different from the first operation; and a redundancy block that is disposed closer to the second circuit block than the first circuit block, and which compares a repair address of a repaired memory cell among the plurality of memory cells with an input address to then generate a redundancy control signal, and to supply the redundancy control signal to the first circuit block and the second circuit block.
A nonvolatile memory device, comprising:
A nonvolatile memory device, comprising:
A nonvolatile memory device, comprising:
A nonvolatile memory device, comprising:
A nonvolatile memory device, comprising:
A nonvolatile memory device, comprising:
A nonvolatile memory device comprising:
Dependencies are inferred from the claim text.
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From the US filing history. Foreign family members aren’t listed.
Arrangements for selecting an address in a digital store: group selection circuits, e.g. for memory block selection, chip selection, array selection
Using programmable devices: with improved layout
With improved access time or stability: by choosing redundant lines at an output stage
Using resistive RAM [RRAM] elements: comprising amorphous/crystalline phase transition cells
About 4 years 11 months of term left · ends 25 Sep 2031 (estimated)
This application claims priority from Korean Patent Application No. 10-2010-0039485 filed on Apr. 28, 2010 in the Korean Intellectual Property Office, and all the benefits accruing therefrom under 35 U.S.C. 119, the contents of which are hereby incorporated by reference herein in their entirety.
1. Field of the Inventive Concept
The present inventive concept relates to a nonvolatile memory device using a variable resistive element.
The above and other features and advantages of the present inventive concept will become more apparent by describing in detail preferred embodiments thereof with reference to the attached drawings as follows.
FIG. 1 is a block diagram illustrating an example of an embodiment of a nonvolatile memory device.
FIG. 2 is a high level block diagram illustrating an example of an embodiment of a nonvolatile memory device according to one or more aspects of the present inventive concept.
Advantages and features of the present inventive concept and methods of accomplishing the same may be understood more readily by reference to the following detailed description of preferred embodiments and the accompanying drawings. The present inventive concept may, however, be embodied in many different forms and should not be construed as being limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete and will fully convey the concept of the inventive concept to those skilled in the art, and the present inventive concept will only be defined by the appended claims. Like reference numerals refer to like elements throughout the specification.
It will be understood that when an element is referred to as being “connected to” or “coupled to” another element, it can be connected or coupled to the other element or intervening elements may be present. In contrast, when an element is referred to as being “directly connected to” or “directly coupled to” another element, there are no intervening elements present. Throughout the drawings and written description, like reference numerals will be used to refer to like or similar elements. As used herein, the term “and/or” includes any and all combinations of one or more of the associated listed items.
It will be understood that, although the terms first, second, etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another element. Thus, for example, a first element, a first component or a first section discussed below could be termed a second element, a second component or a second section without departing from the teachings of the present inventive concept.