Non-volatile memory device
AssigneeSamsung Electronics Co., Ltd.
InventorsYong-Kyu Lee, Tea-Kwang Yu, Bo-Young Seo
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Abstract
A non-volatile memory device includes a first sector including a first sector selection transistor and a first plurality of pages connected to the first sector selection transistor, and a second sector including a second sector selection transistor and a second plurality of pages connected to the second sector selection transistor. Each of the first and second plurality of pages includes a memory transistor and a selection transistor, and a number of pages in the first plurality of pages is greater than a number of pages in the second plurality of pages.
Claims9
A non-volatile memory device comprising:
- a first sector including a first sector selection transistor and a first plurality of pages connected to the first sector selection transistor;
- and
- a second sector including a second sector selection transistor and a second plurality of pages connected to the second sector selection transistor,
- wherein each of the first and second plurality of pages includes a memory transistor and a selection transistor, and a number of pages in the first plurality of pages is greater than a number of pages in the second plurality of pages.
Dependencies are inferred from the claim text.