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US 8,526,224 B2Granted
Compound cell spin-torque magnetic random access memory
AssigneeSeagate Technology LLC
InventorsThomas William Clinton, Werner Scholz
Life of this patent
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Abstract
A compound magnetic data storage cell, applicable to spin-torque random access memory (ST-RAM), is disclosed. A magnetic data storage cell includes a magnetic storage element and two terminals communicatively connected to the magnetic storage element. The magnetic storage element is configured to yield any of at least three distinct magnetoresistance output levels, corresponding to stable magnetic configurations, in response to spin-momentum transfer inputs via the terminals.
Claims17
A spin torque memory cell, comprising:
- a magnetic data storage element comprising two magnetic layers separated by a tunnel barrier, the magnetic data storage element configured to yield any of at least three distinct magnetoresistance output levels, corresponding to stable magnetic configurations, in response to spin-momentum transfer input.
A spin torque memory cell, comprising:
- two magnetic layers separated by an intermediate tunnel barrier layer configured to yield a magnetoresistance output level defied by a stepped hysteresis loop comprising a highest output level, an intermediate output level and a lowest output level, corresponding to three stable magnetic configurations, in response to spin-polarized current passing through the two magnetic layers.
A method comprising:
- applying a spin-polarized current through a magnetic data storage cell comprising two magnetic layers separated by a tunnel barrier to write data to the magnetic data storage cell, to yield one of three stable magnetic configurations.
Dependencies are inferred from the claim text.