Memory device and manufacturing method the same

A semiconductor device comprising:

• a first driver circuit;
• a second driver circuit;
• and
• a memory cell including a first wiring, a second wiring, a first transistor, and a second transistor, at least one of the first transistor and the second transistor having a semiconductor film including a channel formation region,
• wherein the first wiring is electrically connected to the first driver circuit,
• wherein the second wiring is electrically connected to the second driver circuit, and
• wherein the semiconductor film includes a metal oxide and the metal oxide includes indium.

A semiconductor device comprising:

• an integrated circuit comprising:
• a first driver circuit;
• a second driver circuit;
• and
• a memory cell,
• wherein the memory cell comprises a first wiring, a second wiring, a first transistor, a second transistor, at least one of the first transistor and the second transistor having a semiconductor film including a channel formation region,
• wherein the first wiring is electrically connected to the first driver circuit,
• wherein the second wiring is electrically connected to the second driver circuit, wherein the semiconductor film includes a metal oxide and the metal oxide includes indium.