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US 8,526,209 B2Granted
Complementary read-only memory (ROM) cell and method for manufacturing the same
AssigneeSTMicroelectronics International N.V.
InventorJitendra Dasani
Life of this patent
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Abstract
A complementary read-only memory (ROM) cell includes a transistor; and a bit line and a complementary bit line adjacent to the transistor; wherein a drain terminal of the transistor is connected to one of the bit line and the complementary bit line based on data programmed in the ROM cell.
Claims6
A complementary read-only memory (ROM) cell, comprising:
- a transistor;
- and
- a bit line and a complementary bit line disposed adjacent the transistor;
- wherein a drain terminal of the transistor is configured to be connected to one of the bit line and the complementary bit line based on data programmed in the ROM cell.
1 more element
Dependencies are inferred from the claim text.