Fusible I/O interconnection systems and methods for flip-chip packaging involving substrate-mounted stud bumps

A semiconductor device, comprising:

• a semiconductor die having a plurality of bond pads formed on a surface of the semiconductor die;
• a fusible layer formed over the bond pads formed on the surface of the semiconductor die with a maximum width less than or equal to a width of the bond pads;
• a substrate including a plurality of traces formed on a surface of the substrate;
• and
• a plurality of electrical interconnects containing non-fusible material formed over the traces on the substrate, the electrical interconnects each including a wire having a ball bond formed over first and second side surfaces of the traces and a tip of uniform height electrically connected to the bond pad of the semiconductor die such that an intermediate portion of the electrical interconnects is free from the fusible layer.

A semiconductor device, comprising:

• a semiconductor die having a plurality of bond pads formed on a surface of the semiconductor die;
• an under bump metallization (UBM) formed over the bond pads;
• a fusible layer formed over the UBM;
• a substrate having a plurality of traces formed on a surface of the substrate;
• and
• a plurality of stud bumps containing non-fusible material formed over the traces, the stud bumps each including a wire having a ball bond formed over first and second side surfaces of the traces and a tip electrically connected to the bond pads such that an intermediate portion of the stud bumps is exposed with respect to the fusible layer.

A semiconductor device, comprising:

• a semiconductor die having a plurality of bond pads formed on a surface of the semiconductor die;
• a fusible layer formed over the surface of the semiconductor die;
• a substrate having a plurality of bond pads formed on a surface of the substrate;
• and
• a plurality of electrical interconnects containing non-fusible material formed over the bond pads on the substrate, the electrical interconnects including a wire having a ball bond attached to the bond pad of the substrate and a tip of uniform height electrically connected to the bond pad of the semiconductor die such that an intermediate portion of the electrical interconnects is exposed with respect to the fusible layer.