Device with through-silicon via (TSV) and method of forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChen-Hua Yu, Wen-Chih Chiou, Ebin Liao, Tsang-Jiuh Wu
Life of this patent
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Abstract
A device with through-silicon via (TSV) and a method of forming the same includes the formation of an opening in a silicon substrate, the formation of a first insulation layer on the sidewalls and bottom of the opening, the formation of a second insulation layer on the sidewalls and bottom of the opening. A first interface between the first insulation layer and the silicon substrate has an interface roughness with a peak-to-valley height less than 5 nm. A second interface between the second insulation layer and the conductive layer has an interface roughness with a peak-to-valley height less than 5 nm.
Claims21
A device, comprising:
- a silicon substrate having a first surface and a second surface opposite the first surface;
- a through-silicon via (TSV) structure passing through the silicon substrate from the first surface to the second surface;
- and
- an insulation structure formed between the silicon substrate and the TSV structure,
- wherein a first interface between the insulation structure and the silicon substrate from the first surface to the second surface has an interface roughness with a peak-to-valley height less than 5 nm, and a second interface between the insulation structure and the TSV structure from the first surface to the second surface has an interface roughness with a peak-to-valley height less than 5 nm.
A three dimensional integrated circuit (3D-IC) comprising:
- a first substrate having a first surface and a second surface opposite the first surface;
- a through-silicon via (TSV) structure passing through the first substrate from the first surface to the second surface;
- an insulation structure formed between the silicon substrate and the TSV structure,
- wherein a first interface between the insulation structure and the silicon substrate from the first surface to the second surface has an interface roughness with a peak-to-valley height less than 5 nm, and a second interface between the insulation structure and the TSV structure from the first surface to the second surface has an interface roughness with a peak-to-valley height less than 5 nm;
- and
- a second substrate electrically connected to the first substrate.
A device, comprising:
- a silicon substrate having a first surface and a second surface opposite the first surface;
- a through-silicon via (TSV) structure passing through the silicon substrate from the first surface to the second surface;
- and
- an insulation structure formed between the silicon substrate and the TSV structure,
- wherein the insulation structure comprises a first insulating layer and a second insulating layer, and an interface between the first insulating layer and the second insulating layer from the first surface to the second surface has an interface roughness with a peak-to-valley height greater than 10 nm.
Dependencies are inferred from the claim text.