Semiconductor device having semiconductor substrate, and method of manufacturing the same
AssigneePanasonic Corporation
InventorTakeshi Matsumoto
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Abstract
A semiconductor device includes a semiconductor substrate having a plurality of electrode pads, a protective film covering the upper surface of the semiconductor substrate and having an opening so that the electrode pad is exposed therethrough, a metal film formed on the electrode pad exposed through the opening, and a bump formed on the metal film. The metal film includes a plurality of grooves radially formed from the center thereof toward the periphery thereof.
Claims17
A semiconductor device, comprising:
- a semiconductor substrate having a plurality of electrode pads;
- a protective film covering an upper surface of the semiconductor substrate, and having an opening so that each of the electrode pads is exposed therethrough;
- a metal film formed on each of the electrode pads exposed through the opening;
- and
- a bump formed on the metal film,
- wherein
- the metal film includes a plurality of grooves radially formed from a center thereof toward a periphery thereof.
A semiconductor device, comprising:
- a semiconductor substrate having a plurality of electrode pads;
- a first protective film covering an upper surface of the semiconductor substrate, and having an opening so that each of the electrode pads is exposed therethrough;
- a second protective film formed on each of the electrode pads exposed through the opening;
- a metal film formed on the opening;
- and
- a bump formed on the metal film,
- wherein
- the second protective film includes a plurality of branches radially formed from a center of each of the electrode pads toward a periphery of each of the electrode pads,
- the metal film includes a plurality of grooves radially formed from a center thereof toward a periphery thereof, and
- the grooves of the metal film are formed along shapes of the branches of the second protective film.
A semiconductor substrate on which a plurality of electrode pads, a protective film having an opening so that each of the electrode pads is exposed therethrough, and a metal film formed on each of the electrode pads exposed through the opening are formed,
- wherein
- the metal film includes a plurality of grooves radially formed from a center thereof toward a periphery thereof.
A method of manufacturing a semiconductor device including a semiconductor substrate having a plurality of electrode pads, the method comprising:
- forming a protective film to cover an upper surface of the semiconductor substrate;
- forming an opening so that each of the electrode pads is exposed therethrough;
- forming a metal film on each of the electrode pads exposed through the opening;
- radially forming grooves from a center of the metal film toward a periphery of the metal film;
- and
- forming a bump on the metal film.
A method of manufacturing a semiconductor device including a semiconductor substrate having a plurality of electrode pads, the method comprising:
- forming a first protective film to cover an upper surface of the semiconductor substrate;
- forming an opening so that each of the electrode pads is exposed therethrough;
- forming, in the opening, a second protective film having a plurality of branches radially formed from a center of each of the electrode pads toward a periphery of each of the electrode pads;
- forming a metal film on each of the electrode pads exposed through the opening by an electroless plating method, the metal film including a plurality of grooves radially extending from a center of the metal film toward a periphery of the metal film along shapes of the branches of the second protective film;
- and
- forming a bump on the metal film.
Dependencies are inferred from the claim text.