Semiconductor power module and method of manufacturing the same
AssigneeRohm Co., Ltd.
InventorToshio Hanada
Life of this patent
Estimating the term…
Abstract
A semiconductor power module according to the present invention includes a base member, a semiconductor power device having a surface and a rear surface with the rear surface bonded to the base member, a metal block, having a surface and a rear surface with the rear surface bonded to the surface of the semiconductor power device, uprighted from the surface of the semiconductor power device in a direction separating from the base member and employed as a wiring member for the semiconductor power device, and an external terminal bonded to the surface of the metal block for supplying power to the semiconductor power device through the metal block.
Claims22
A semiconductor power module comprising:
- a base member;
- a semiconductor power device having a bonding surface and a rear surface with the rear surface bonded to the base member;
- a metal block, having a bonding surface and a rear surface with the rear surface of the metal block being bonded to the bonding surface of the semiconductor power device, uprighted from the bonding surface of the semiconductor power device in a direction separating from the base member and employed as a wiring member for the semiconductor power device;
- an external terminal bonded to the bonding surface of the metal block for supplying power to the semiconductor power device through the metal block;
- a case having a base portion provided with a device region where the semiconductor power device is arranged, and a frame portion fixed to the base portion for surrounding the device region;
- and
- a top plate, made of resin, fixed to the frame portion of the case and opposed to the device region, wherein
- the external terminal includes a plate terminal provided along the top plate, and
- the top plate has a support portion overlapping with the plate terminal in plan view for supporting the plate terminal from a side of a rear surface thereof.
A method of manufacturing a semiconductor power module comprising the steps of:
- preparing a case having a base portion provided with a device region where a semiconductor power device is arranged, and a frame portion fixed to the base portion for surrounding the device region;
- bonding a rear surface of a semiconductor power device, having a bonding surface and the rear surface, to the device region;
- bonding a rear surface of a metal block, having a bonding surface and the rear surface of the metal block, employed as a wiring member for the semiconductor power device to the bonding surface of the semiconductor power device after bonding the device region and the semiconductor power device to each other;
- fixing a top plate made of resin to the frame portion of the case so as to oppose to the device region;
- performing preliminary soldering on a plate terminal for supplying power to the semiconductor power device;
- and
- bonding the plate terminal and the metal block to each other by bringing the metal block into contact with a portion of the plate terminal subjected to the preliminary soldering and heating the plate terminal while supporting the plate terminal from a side of a rear surface thereof by the top plate.
A semiconductor power module comprising:
- a base member;
- a first and a second semiconductor power devices being different device types from one another, each the first and the second semiconductor device having a bonding surface and a rear surface with the rear surface bonded to the base member;
- a plurality of metal blocks, having a bonding surface and a rear surface with the rear surface of the metal blocks being bonded to the bonding surfaces of the first and the second semiconductor power devices, respectively, uprighted from the bonding surfaces of the first and the second semiconductor power devices in a direction separating from the base member and employed as a wiring member for the first and the second semiconductor power devices;
- and
- an external terminal bonded to the bonding surface of the plurality of metal blocks and employed as a common terminal for the first and the second semiconductor power devices.
Dependencies are inferred from the claim text.