Semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsYuta Endo, Toshinari Sasaki, Kosei Noda, Mizuho Sato
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Abstract
An insulating layer containing a silicon peroxide radical is used as an insulating layer in contact with an oxide semiconductor layer for forming a channel. Oxygen is released from the insulating layer, whereby oxygen deficiency in the oxide semiconductor layer and an interface state between the insulating layer and the oxide semiconductor layer can be reduced. Accordingly, a semiconductor device where reliability is high and variation in electric characteristics is small can be manufactured.
Claims22
A semiconductor device comprising:
- a substrate;
- a gate electrode;
- an oxide semiconductor layer comprising indium and zinc;
- a source electrode and a drain electrode electrically connected to the oxide semiconductor layer;
- a first insulating layer between the gate electrode and the oxide semiconductor layer;
- and
- a second insulating layer comprising a silicon peroxide radical, wherein the oxide semiconductor layer is provided between the first insulating layer and the second insulating layer,
- wherein the second insulating layer is in contact with the oxide semiconductor layer.
A semiconductor device comprising an insulating layer in contact with an oxide semiconductor layer,
- wherein the insulating layer comprises a silicon peroxide radical, and
- wherein the oxide semiconductor layer comprises indium and zinc.
A semiconductor device comprising:
- a gate electrode;
- a first insulating layer over the gate electrode;
- an oxide semiconductor layer on and in contact with the first insulating layer;
- a source electrode and a drain electrode over and electrically connected to the oxide semiconductor layer;
- and
- a second insulating layer over the oxide semiconductor layer, the source electrode, and the drain electrode,
- wherein the oxide semiconductor layer comprises indium and zinc, and
- wherein the first insulating layer comprises a silicon peroxide radical.
A semiconductor device comprising:
- a first insulating layer;
- an oxide semiconductor layer on and in contact with the first insulating layer;
- a source electrode and a drain electrode over and electrically connected to the oxide semiconductor layer;
- and
- a second insulating layer over the oxide semiconductor layer, the source electrode, and the drain electrode;
- a gate electrode over the second insulating layer,
- wherein the oxide semiconductor layer comprises indium and zinc, and
- wherein the first insulating layer comprises a silicon peroxide radical.
Dependencies are inferred from the claim text.