Electrical overstress protection using through-silicon-via (TSV)
AssigneeAnalog Devices, Inc.
InventorsLejun Hu, Srivatsan Parthasarathy, Michael Coln, Javier Salcedo
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Abstract
A semiconductor device formed on a substrate includes a first diode junction formation, a second diode junction formation, and at least one through-silicon-via (TSV), in which a cathode and an anode of the first diode are cross-connected to an anode and cathode of the second diode through the at least one TSV for achieving electrical robustness in through-silicon-via based integrated circuits, including photosensitive devices and circuits for signal processing applications.
Claims17
A semiconductor structure formed on a single semiconductor substrate, comprising:
- a first component including a PN junction;
- a second component including a metal-semiconductor barrier;
- and
- at least two through-silicon-vias (TSVs),
- wherein a cathode and an anode of the PN junction are cross-connected to an anode and a cathode of the metal-semiconductor barrier through one TSV of the at least two TSVs,
- wherein the second component is inside one TSV and physically isolated from the first component.
A photo sensing structure, comprising:
- a semiconductor substrate including:
- a photodiode including a PN junction;
- and
- a protective diode including a metal-semiconductor barrier;
- and
- at least two through-silicon-vias (TSVs),
- wherein a cathode and an anode of the photodiode are cross-connected to an anode and a cathode of the protective diode through one TSV of the at least two TSVs,
- wherein the protective diode is inside one TSV and physically isolated from the photodiode.
A method, comprising:
- forming a semiconductor substrate;
- epitaxially growing a silicon layer on top of the semiconductor substrate;
- etching at least two through-silicon-vias (TSVs) that cuts through the silicon layer;
- implanting donors in a first region to form a first semiconductor component including a PN junction;
- depositing a metal-semiconductor barrier to form a second semiconductor component;
- and
- cross-connecting a cathode and an anode of the PN junction to an anode and a cathode of the metal-semiconductor barrier through one TSV of the at least two TSVs,
- wherein the second component is inside one TSV and physically isolated from the first component.
Dependencies are inferred from the claim text.