Phase change memory device having 3 dimensional stack structure and fabrication method thereof
AssigneeHynix Semiconductor Inc.
InventorKi Ho Yang
Life of this patent
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Abstract
A phase change memory device having a 3-D stack structure and a fabrication method for making the same are presented. The phase change memory device includes a semiconductor substrate, a word line structure and one or more phase change structures. The word line structure extends in one first direction on the semiconductor substrate. The one or more phase change structures extend mutually in parallel from one sidewall of the word line structure. The, the memory cell including a switching device, one side of the switching device contacted with the one sidewall of the word line structure, a heating electrode formed on the other side portion of the switching device, and a phase change pattern, one sidewall of the phase change pattern contacted with the heating electrode.
Claims26
A phase change memory device, comprising:
- a substantially planar semiconductor substrate;
- a word line extending along a first direction substantially in parallel to the planar semiconductor substrate, wherein the word line includes a first sidewall and a second sidewall;
- and
- a phase change structure extending in parallel with the planar semiconductor substrate and formed on the first sidewall of the word line,
- wherein the phase change structure comprises a switching device formed on the first sidewall of the word line, a heating electrode formed on one sidewall of the switching device, and a phase change pattern formed on one sidewall of the heating electrode,
- and the first and second sidewalls are formed in a second direction perpendicular to the first direction, and the second direction is substantially parallel to the planar semiconductor substrate.
A phase change memory device, comprising:
- a substantially planar semiconductor substrate having a cell region and a device isolation region;
- a plurality of word lines disposed on the cell region, such that each word line extends along a first direction and each word line is substantially in parallel to each other word line, each word line is also substantially in parallel to the planar semiconductor substrate and that the word lines are stacked and separated from each other by interlayer insulating layers that are interposed between the word lines;
- and
- a plurality of phase change (PC) structures disposed on the cell region, each PC structure extending substantially in parallel to each other PC structure and extending along a second direction substantially orthogonal with respect to the first direction, each PC structure also substantially extending in parallel to the planar semiconductor substrate, and that the PC structures are also stacked and separated from each other by the interlayer insulating layers that are also interposed between the PC structures,
- wherein each PC structure comprises a switching device contacting one sidewall of the word line, a heating electrode contacting one sidewall of the switching device and a phase change pattern contacting one sidewall of the heating electrode,
- and the second direction is substantially parallel to the planar semiconductor substrate.
Dependencies are inferred from the claim text.