Confinement techniques for non-volatile resistive-switching memories
AssigneeIntermolecular, Inc.
InventorPrashant Phatak
Life of this patent
Estimating the term…
Abstract
Confinement techniques for non-volatile resistive-switching memories are described, including a memory element having a first electrode, a second electrode, a metal oxide between the first electrode and the second electrode. A resistive switching memory element described herein includes a first electrode adjacent to an interlayer dielectric, a spacer over at least a portion of the interlayer dielectric and over a portion of the first electrode and a metal oxide layer over the spacer and the first electrode such that an interface between the metal oxide layer and the electrode is smaller than a top surface of the electrode.
Claims19
A resistive-switching memory element comprising:
- a first electrode provided adjacent to an interlayer dielectric;
- a spacer extending over at least a portion of the interlayer dielectric and over a first portion of the first electrode and forming an opening over a second portion of the first electrode;
- a first metal oxide layer provided within the opening and over the second portion of the first electrode such that a first interface between the first metal oxide layer and the first electrode is smaller than a top surface of the first electrode, wherein the first metal oxide layer extends over a portion of the spacer;
- and
- a second electrode, comprising a different material than the first electrode, over the first metal oxide layer.
Dependencies are inferred from the claim text.