Back to results
US 8,525,295 B2Granted
Semiconductor device
AssigneeRenesas Electronics Corporation
InventorYasutaka Nakashiba
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes a substrate, a transistor formed over the substrate, insulating layers formed over the substrate, a multilayer wiring formed in the insulating layers, a first inductor formed in the insulating layers, and a second inductor formed over the first inductor and overlapping the first inductor. The insulating layers contain a silicon, wherein at least the two insulating layers are formed between the first inductor and the second inductor, and the first inductor and the second inductor are a spiral wiring pattern.
Claims10
A semiconductor device comprising:
- a substrate;
- a transistor formed over the substrate;
- insulating layers formed over the substrate;
- a multilayer wiring formed in the insulating layers;
- a first inductor formed in the insulating layers;
- and
- a second inductor formed over the first inductor and overlapping the first inductor,
- wherein the insulating layers contain a silicon,
- wherein at least the two insulating layers are formed between the first inductor and the second inductor, and
- wherein the first inductor and the second inductor are a spiral wiring pattern.
7 more elements
A semiconductor device comprising:
- a substrate having an inductor region formed over the substrate;
- a transistor formed over the substrate;
- a first insulating layer formed over the substrate;
- a first wiring layer formed over the first insulating layer;
- a first inductor formed in the first wiring layer and the inductor region;
- a first wiring formed in the first wiring layer;
- a second insulating layer formed over the first wiring layer;
- a second wiring layer formed over the second insulating layer;
- a second wiring formed in the second wiring layer;
- and
- a second inductor formed over the second wiring layer and the inductor region,
- and overlapping the first inductor,
- wherein the first inductor and the second inductor have a spiral wiring pattern,
- wherein the first inductor and the second inductor are only inductor in the
- inductor region between the first inductor and the second inductor,
- wherein the second wiring layer contains a silicon.
13 more elements
Dependencies are inferred from the claim text.