SOI device with DTI and STI
AssigneeInternational Business Machines Corporation
InventorsKangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Pranita Kulkarni
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Abstract
An SOI structure including a semiconductor on insulator (SOI) substrate including a top silicon layer, an intermediate buried oxide (BOX) layer and a bottom substrate; at least two wells in the bottom substrate; a deep trench isolation (DTI) separating the two wells, the DTI having a top portion extending through the BOX layer and top silicon layer and a bottom portion within the bottom substrate wherein the bottom portion has a width that is larger than a width of the top portion; and at least two semiconductor devices in the silicon layer located over one of the wells, the at least two semiconductor devices being separated by a shallow trench isolation within the top silicon layer.
Claims7
An SOI structure comprising:
- a semiconductor on insulator (SOI) substrate including a top semiconductor layer, an intermediate buried oxide (BOX) layer and a bottom substrate;
- at least two wells in the bottom substrate;
- a deep trench isolation (DTI) separating said two wells, the DTI having a top portion extending through the BOX layer and top semiconductor layer and a bottom portion within the bottom substrate wherein the bottom portion has a width that is larger than a width of the top portion;
- and
- at least two semiconductor devices in the semiconductor layer located over one of the wells, the at least two semiconductor devices being separated by a shallow trench isolation (STI) within the top semiconductor layer.
Dependencies are inferred from the claim text.