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US 8,525,289 B2Granted
Adjusting threshold voltage for sophisticated transistors by diffusing a gate dielectric cap layer material prior to gate dielectric stabilization
AssigneeGlobalfoundries Inc.
InventorsRichard Carter, Martin Trentzsch, Sven Beyer, Rohit Pal
Life of this patent
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Abstract
Sophisticated gate electrode structures may be formed by providing a cap layer including a desired species that may diffuse into the gate dielectric material prior to performing a treatment for stabilizing the sensitive gate dielectric material. In this manner, complex high-k metal gate electrode structures may be formed on the basis of reduced temperatures and doses for a threshold adjusting species compared to conventional strategies. Moreover, a single metal-containing electrode material may be deposited for both types of transistors.
Claims7
A semiconductor device, comprising:
- a first active region;
- a first gate electrode structure formed on said first active region, said first gate electrode structure comprising a dielectric base material and a high-k dielectric material formed on said dielectric base material, said high-k dielectric material comprising a first threshold adjusting metal species in said first gate electrode structure;
- a second active region;
- a second gate electrode structure formed on said second active region, said second gate electrode structure comprising said dielectric base material and said high-k dielectric material formed on said dielectric base material, said high-k dielectric material comprising a second threshold adjusting metal species in said second gate electrode structure;
- and
- a metal-containing electrode material, said metal-containing electrode material being formed on said high-k dielectric material in said first and second gate electrode structures.
3 more elements
Dependencies are inferred from the claim text.