Materials, systems and methods for optoelectronic devices
AssigneeInVisage Technologies, Inc.
InventorsHui Tian, Edward Sargent
Life of this patent
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Abstract
A photodetector is described along with corresponding materials, systems, and methods. The photodetector comprises an integrated circuit and at least two optically sensitive layers. A first optically sensitive layer is over at least a portion of the integrated circuit, and a second optically sensitive layer is over the first optically sensitive layer. Each optically sensitive layer is interposed between two electrodes. The two electrodes include a respective first electrode and a respective second electrode. The integrated circuit selectively applies a bias to the electrodes and reads signals from the optically sensitive layers. The signal is related to the number of photons received by the respective optically sensitive layer.
Claims70
A photodetector comprising:
- a semiconductor substrate;
- a plurality of pixel regions, each pixel region comprising an optically sensitive layer over the substrate, the optically sensitive layer positioned to receive light;
- and
- a pixel circuit for each pixel region, each pixel circuit comprising a charge store and a switching element between the charge store and the optically sensitive layer for the respective pixel region, the charge store and the switching element of one or more of the pixel circuits integrated on and integrated in the semiconductor substrate below the plurality of pixel regions, the area of the semiconductor substrate for each respective pixel circuit being positioned under a portion of the corresponding pixel region and a portion of another pixel region that is not in electrical communication with the respective pixel circuit.
A photodetector comprising:
- a semiconductor substrate;
- a plurality of pixel regions over the semiconductor substrate, each pixel region comprising a respective first electrode, a respective second electrode and an optically sensitive layer between the first electrode and the second electrode;
- a pixel circuit for each pixel region, each pixel circuit comprising a charge store, a switching element between the charge store and the optically sensitive layer for the respective pixel region, and a read out circuit to sample a voltage from the charge store, the pixel circuit formed on the semiconductor substrate below the plurality of pixel regions;
- and
- circuitry to switch the switching element for all of the pixel circuits at substantially the same time;
- wherein the distance between the respective first electrode and the respective second electrode for each respective pixel region is less than approximately 2 micrometers, and a top surface area of each pixel region is less than approximately 4 square micrometers;
- wherein each pixel circuit is formed on a region of the semiconductor substrate below the plurality of pixel regions having an area less than or equal to the top surface area of the corresponding pixel region;
- and
- wherein the area of the semiconductor substrate for each respective pixel circuit is positioned under a portion of the corresponding pixel region and a portion of another pixel region that is not in electrical communication with the respective pixel circuit.
Dependencies are inferred from the claim text.