Method of making wafer structure for backside illuminated color image sensor
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsTzu-Hsuan Hsu, Chris Hsieh, Dun-Nian Yaung, Chung-Yi Yu
Life of this patent
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Abstract
An integrated circuit device is provided. The integrated circuit device can include a substrate; a first radiation-sensing element disposed over a first portion of the substrate; and a second radiation-sensing element disposed over a second portion of the substrate. The first portion comprises a first radiation absorption characteristic, and the second portion comprises a second radiation absorption characteristic different from the first radiation absorption characteristic.
Claims20
A backside illuminated sensor, comprising:
- a semiconductor substrate having a substantially planar front surface and a back surface;
- a plurality of pixels formed on the substantially planar front surface of the semiconductor substrate;
- and
- wherein the semiconductor substrate comprises a plurality of thicknesses between the substantially planar front surface and the back surface, wherein at least one pixel from the plurality of pixels is aligned with at least one thickness from the plurality of thicknesses, and
- wherein the plurality of pixels comprises a first pixel and a second pixel and the plurality of thicknesses comprises a first thickness aligned with the first pixel and a second thickness aligned with the second pixel.
An integrated circuit comprising:
- a substrate having a substantially planar front surface and a back surface;
- a first radiation-sensing element disposed on the substantially planar front surface of a first portion of the substrate, wherein the first radiation-sensing element includes a first doped region disposed in the substrate;
- a second radiation-sensing element disposed on the substantially planar front surface of a second portion of the substrate, wherein the second radiation-sensing element includes a second doped region disposed in the substrate;
- and
- wherein the first portion of the substrate has a first thickness associated with a first radiation absorption characteristic and the second portion of the substrate has a second thickness associated with a second radiation absorption characteristic different from the first radiation absorption characteristic.
An integrated circuit comprising:
- a substrate having a substantially planar first surface and a second surface opposite the first surface;
- a first radiation-sensing element and a second radiation-sensing element disposed on the substantially planar first surface of the substrate;
- and
- wherein the substrate comprises a first thickness and a second thickness, wherein the first thickness and the second thickness are between the substantially planar first surface and the second surface, and further wherein the first thickness is aligned with the first radiation-sensing element and the second thickness is aligned with the second radiation-sensing element.
Dependencies are inferred from the claim text.