Single element three terminal piezoresistive pressure sensor

A method of manufacturing a three terminal pressure sensor (“3-TPS”), comprising:

• fabricating a 3-TPS element that overlaps at least a portion of a cavity, the 3-TPS element having an angle at which the 3-TPS element is configured across the at least a portion of the cavity;
• and fabricating an input terminal and first and second output terminals in communication with the 3-TPS element.;
• wherein the 3-TPS element includes at most three terminals.

A three terminal pressure sensor (“3-TPS”), comprising:

• a semiconducting layer having a cavity;
• and a 3-TPS element having at most three terminals and at least one piezoresistive layer overlapping at least a portion of the cavity and oriented at an angle selected to provide a desired sensitivity for the 3-TPS.

A method, comprising:

• fabricating a three terminal pressure sensors (“3-TPS”) of the type that includes a 3-TPS element having at most three terminals and at least one piezoresistive layer overlapping at least a portion of a cavity and oriented at an angle selected to provide a desired sensitivity for the 3-TPS, wherein fabricating the 3-TPS element includes at least one deep reactive ion etching step;
• and fabricating etched dicing streets along at least the perimeter of the 3-TPS during the at least one deep reactive ion etching step.