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AssigneeThe Board of Trustees of the University of California
InventorsPaul A. Tchertchian, Clark J. Wagner, J. Gary Eden
Estimating the term…
The invention provides combination semiconductor and plasma devices, including transistors and phototransistors. A preferred embodiment hybrid plasma semiconductor device has active solid state semiconductor regions; and a plasma generated in proximity to the active solid state semiconductor regions. Devices of the invention are referred to as hybrid plasma-semiconductor devices, in which a plasma, preferably a microplasma, cooperates with conventional solid state semiconductor device regions to influence or perform a semiconducting function, such as that provided by a transistor. The invention provides a family of hybrid plasma electronic/photonic devices having properties previously unavailable. In transistor devices of the invention, a low temperature, glow discharge is integral to the hybrid transistor. Example preferred devices include hybrid BJT and MOSFET devices.
A hybrid plasma semiconductor device, comprising doped solid state semiconductor regions in a solid state substrate, and at least one electrode arranged with respect to said solid state substrate to generate a plasma in a plasma medium proximate said substrate and said solid state semiconductor regions in a position where the plasma will influence or perform a transistor function in cooperation with said solid state semiconductor regions, and the device comprises three transistor contacts that provide access to the transistor functions and said solid state regions and plasma are arranged such that the device provides one of bipolar unction transistor functions or field effect transistor functions, wherein said plasma medium comprises comprising gas(es), vapor(s), or a combination thereof.
A hybrid plasma semiconductor device, comprising doped solid state semiconductor regions in a solid state substrate, and at least one electrode arranged with respect to said solid state substrate to generate a plasma proximate said substrate and said solid state semiconductor regions in a position where the plasma will influence or perform a semiconducting function in cooperation with said solid state semiconductor regions, wherein:
A hybrid plasma semiconductor device, comprising doped solid state semiconductor regions in a solid state substrate, and at least one electrode arranged with respect, to said solid state substrate to generate a plasma proximate said substrate and said solid state semiconductor regions in a position where the plasma will influence or perform a semiconducting function in cooperation with said solid state semiconductor regions, wherein:
A hybrid plasma semiconductor device, comprising doped solid state semiconductor regions in a solid state substrate, and at least one electrode arranged with respect to said solid state substrate to generate a plasma proximate said substrate and said solid state semiconductor regions in a position where the plasma will influence or perform a semiconducting function in cooperation with said solid state semiconductor regions, wherein:
A hybrid plasma semiconducting transistor device comprising a plurality of active semiconductor regions, at least one of said active regions being a microplasma region that forms a microplasma semiconductor to serve as one of said active regions in response to an appropriate electric field, and at least one of the other of said plurality of active semiconductor regions being formed by solid state semiconductor material, and three transistor contacts that provide access to the transistor function provided by said active semiconductor.
A hybrid plasma semiconducting device comprising a plurality of active semiconductor regions, at least one of said active regions being a plasma or influence by a plasma, and at least one of the other of said plurality of active semiconductor regions being formed by solid state semiconductor material, wherein
A hybrid plasma transistor device, comprising:
A hybrid semiconductor device, comprising:
Dependencies are inferred from the claim text.