Semiconductor device and method of manufacturing the same

A method of manufacturing a semiconductor device, comprising:

• forming a first surface passivation film on a semiconductor layer;
• forming a first opening, a second opening, and a third opening on the first surface passivation film;
• forming a second surface passivation film to cover the first surface passivation film, the semiconductor layer exposed through the openings, and side surfaces of the openings;
• opening portions covering the first opening and the second opening of the second surface passivation film with leaving portions covering side surfaces of the openings be covered;
• forming a source electrode on the first opening, a drain electrode on the second opening, and a gate electrode on the third electrode on the third opening;
• and
• heat-treating the source electrode, the drain electrode and the gate electrode;
• wherein
• a material of the second passivation film has a melting point higher than the melting points of the gate electrode, the source electrode, and the drain electrode;
• and
• wherein
• the semiconductor device includes:
• a substrate;
• the semiconductor layer to be provided on the substrate;
• the first surface passivation film including nitride to be formed on the semiconductor layer and to have at least two openings;
• the second surface passivation film to cover an upper surface and a side surface of the first surface passivation film;
• the gate electrode to be provided on a part of the second surface passivation film;
• and
• the source electrode and the drain electrode to be respectively provided on the two openings.