High-frequency switching transistor and high-frequency circuit

A high-frequency circuit, comprising:

• a switch with a high-frequency switching transistor, comprising,
• a substrate having a substrate dopant concentration,
• a barrier region bordering on the substrate, comprising
• a first conductivity type and having a barrier region dopant concentration which is higher than the substrate dopant concentration,
• a source region embedded in the barrier region, comprising a second conductivity type different to the first conductivity type, and having a source region dopant concentration which is higher than the barrier region dopant concentration,
• a drain region embedded in the barrier region and disposed offset from the source region, comprising the second conductivity type and having a dopant concentration which is higher than the barrier region dopant concentration,
• a channel region extending between the source region and the drain region, wherein the channel region comprises a subregion of the barrier region, and
• an insulation region, which covers the channel region and is disposed between the channel region and a gate electrode;
• wherein the barrier region dopant concentration and the substrate dopant concentration are chosen for generating a space-charge region around the source region and the drain region and for depleting the barrier region;
• and
• a control circuit configured to open and close the switch depending on a control signal, and operably coupled to provide the gate electrode with a potential for opening the switch, the control circuit further operable to enable a current flow between the source region and the drain region.

A high-frequency circuit with a high-frequency switching transistor, comprising:

• a substrate having a substrate dopant concentration;
• a barrier region bordering on the substrate, comprising a first conductivity type and having a barrier region dopant concentration which is higher than the substrate dopant concentration;
• a source region embedded in the barrier region, comprising a second conductivity type different to the first conductivity type, and having a source region dopant concentration which is higher than the barrier region dopant concentration;
• a drain region embedded in the barrier region and disposed offset from the source region, comprising the second conductivity type and having a dopant concentration which is higher than the barrier region dopant concentration;
• a channel region extending between the source region and the drain region, wherein the channel region comprises a subregion of the barrier region;
• and
• an insulation region, which covers the channel region and is disposed between the channel region and a gate electrode;
• and
• wherein the high-frequency circuit is formed to provide a substrate of the high-frequency transistor with an offset voltage in relation to the source region and the drain region, wherein the offset voltage is chosen for generating a space-charge region around the Source region and the drain region and for depleting the barrier region.