Semiconductor device

A semiconductor device comprising:

• a substrate;
• and
• a plurality of divided elements which are formed over said substrate, each of the plurality of divided elements containing a film having a predetermined pattern with a long-axis direction and a short-axis direction definable therein, and being arranged in a distributed manner in a same layer in an in-plane direction of said substrate,
• said plurality of divided elements being arranged so that every adjacent divided element in a first direction has the long-axis direction thereof aligned differently from those of neighbors, or, so that every adjacent divided element in said first direction is shifted in a second direction, which is orthogonal to said first direction, by an amount smaller than a length of said divided element in said second direction,
• wherein each of said divided element is a divided MIM capacitor which comprises an insulating film formed over said substrate, and a first electrode and a second electrode formed in the same layer in said insulating film, while placing said insulating film in between, said film having a predetermined pattern being said first electrode and said second electrode,
• each of said divided MIM capacitors is configured to have a plurality of said first electrodes and a plurality of said second electrodes alternately disposed,
• said first electrodes and said second electrodes of each of said divided MIM capacitors are formed so as to align said long-axis direction in the same direction, and
• a plurality of said divided MIM capacitors are arranged so that every adjacent divided MIM capacitor in a first direction has the long-axis direction of said first electrodes and said second electrodes aligned differently from those of the neighbors, or, so that every adjacent divided MIM capacitor in said first direction is shifted in said second direction by an amount smaller than the length of said divided MIM capacitor in said second direction.